Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network (LAN). W A S is the most promising material for this device. We have proposed GalnNAsSb QW that includes small amount of Sb to improve the crystalline quality of GaInNAs by GSmEgmwfJ[~I], and introduced GaNAs barriers  to compensate the strain of GaInNAsSb layers.
|Publication status||Published - 2006|
|Event||Conference on Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006 - Long-Beach, California, United Kingdom|
Duration: 21 May 2006 → 26 May 2006
|Conference||Conference on Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006|
|Period||21/05/06 → 26/05/06|