1550nm pulsed operation of a GaInNAsSb VCSEL

N. Laurand; S. Calvez; M.D. Dawson; J.A. Gupta; G.C. Aers

1550nm pulsed operation of a GaInNAsSb VCSEL

N. Laurand, S. Calvez, M.D. Dawson, J.A. Gupta, G.C. Aers

Research output: Contribution to conference › Paper

Abstract

Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network (LAN). W A S is the most promising material for this device. We have proposed GalnNAsSb QW that includes small amount of Sb to improve the crystalline quality of GaInNAs by GSmEgmwfJ[~I], and introduced GaNAs barriers [2] to compensate the strain of GaInNAsSb layers.

Original language	English
Publication status	Published - 2006
Event	Conference on Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006 - Long-Beach, California, United Kingdom Duration: 21 May 2006 → 26 May 2006

Conference

Conference	Conference on Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006
Country	United Kingdom
City	Long-Beach, California
Period	21/05/06 → 26/05/06

Keywords

photonics
physics
optics

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Laurand, N., Calvez, S., Dawson, M. D., Gupta, J. A., & Aers, G. C. (2006). 1550nm pulsed operation of a GaInNAsSb VCSEL. Paper presented at Conference on Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006, Long-Beach, California, United Kingdom.

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title = "1550nm pulsed operation of a GaInNAsSb VCSEL",

abstract = "Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network (LAN). W A S is the most promising material for this device. We have proposed GalnNAsSb QW that includes small amount of Sb to improve the crystalline quality of GaInNAs by GSmEgmwfJ[~I], and introduced GaNAs barriers [2] to compensate the strain of GaInNAsSb layers.",

keywords = "photonics, physics, optics",

author = "N. Laurand and S. Calvez and M.D. Dawson and J.A. Gupta and G.C. Aers",

year = "2006",

language = "English",

note = "Conference on Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006 ; Conference date: 21-05-2006 Through 26-05-2006",

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TY - CONF

T1 - 1550nm pulsed operation of a GaInNAsSb VCSEL

AU - Laurand, N.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Gupta, J.A.

AU - Aers, G.C.

PY - 2006

Y1 - 2006

N2 - Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network (LAN). W A S is the most promising material for this device. We have proposed GalnNAsSb QW that includes small amount of Sb to improve the crystalline quality of GaInNAs by GSmEgmwfJ[~I], and introduced GaNAs barriers [2] to compensate the strain of GaInNAsSb layers.

AB - Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network (LAN). W A S is the most promising material for this device. We have proposed GalnNAsSb QW that includes small amount of Sb to improve the crystalline quality of GaInNAs by GSmEgmwfJ[~I], and introduced GaNAs barriers [2] to compensate the strain of GaInNAsSb layers.

KW - photonics

KW - physics

KW - optics

M3 - Paper

ER -