150°C amorphous silicon thin-film transistor technology for polyimide substrates

H. Gleskova; S. Wagner; V. Gašparík; P. Kováč

doi:10.1149/1.1373661

150°C amorphous silicon thin-film transistor technology for polyimide substrates

H. Gleskova^*, S. Wagner, V. Gašparík, P. Kováč

^*Corresponding author for this work

Electronic And Electrical Engineering

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Abstract

We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 μm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ∼10 ⁷ and an electron mobility of ∼0.7 cm ²/V s.

Original language	English
Pages (from-to)	G370-G374
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	148
Issue number	7
DOIs	https://doi.org/10.1149/1.1373661
Publication status	Published - 1 Jul 2001

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

silicon
thin film transistors
elemental semiconductors
amorphous semiconductors
hydrogen

Access to Document

10.1149/1.1373661

Gleskova-JElectrochemSoc-2001
“© The Electrochemical Society, Inc. 2001. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in the Journal of Electrochemical Society, 148 (7) G370-G374.
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Cite this

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title = "150°C amorphous silicon thin-film transistor technology for polyimide substrates",

abstract = "We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 μm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ∼10 7 and an electron mobility of ∼0.7 cm 2/V s. ",

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author = "H. Gleskova and S. Wagner and V. Ga{\v s}par{\'i}k and P. Kov{\'a}{\v c}",

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AU - Gleskova, H.

AU - Wagner, S.

AU - Gašparík, V.

AU - Kováč, P.

PY - 2001/7/1

Y1 - 2001/7/1

N2 - We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 μm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ∼10 7 and an electron mobility of ∼0.7 cm 2/V s.

AB - We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 μm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ∼10 7 and an electron mobility of ∼0.7 cm 2/V s.

KW - silicon

KW - thin film transistors

KW - elemental semiconductors

KW - amorphous semiconductors

KW - hydrogen

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DO - 10.1149/1.1373661

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 7

ER -

150°C amorphous silicon thin-film transistor technology for polyimide substrates

Abstract

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