Abstract
We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 μm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ∼10 7 and an electron mobility of ∼0.7 cm 2/V s.
| Original language | English |
|---|---|
| Pages (from-to) | G370-G374 |
| Number of pages | 5 |
| Journal | Journal of the Electrochemical Society |
| Volume | 148 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jul 2001 |
Keywords
- silicon
- thin film transistors
- elemental semiconductors
- amorphous semiconductors
- hydrogen
Access to Document
- Gleskova-JElectrochemSoc-2001
“© The Electrochemical Society, Inc. 2001. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in the Journal of Electrochemical Society, 148 (7) G370-G374.