150°C amorphous silicon thin-film transistor technology for polyimide substrates

H. Gleskova, S. Wagner, V. Gašparík, P. Kováč

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 μm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ∼10 7 and an electron mobility of ∼0.7 cm 2/V s. 

LanguageEnglish
PagesG370-G374
Number of pages5
JournalJournal of the Electrochemical Society
Volume148
Issue number7
DOIs
Publication statusPublished - 1 Jul 2001

Fingerprint

Electron mobility
Thin film transistors
Amorphous silicon
polyimides
Polyimides
amorphous silicon
transistors
electron mobility
Defect density
Gate dielectrics
Substrates
Plasma enhanced chemical vapor deposition
thin films
Silicon nitride
Leakage currents
Metal foil
silicon nitrides
Fabrication
Glass
foils

Keywords

  • silicon
  • thin film transistors
  • elemental semiconductors
  • amorphous semiconductors
  • hydrogen

Cite this

Gleskova, H. ; Wagner, S. ; Gašparík, V. ; Kováč, P. / 150°C amorphous silicon thin-film transistor technology for polyimide substrates. In: Journal of the Electrochemical Society. 2001 ; Vol. 148, No. 7. pp. G370-G374.
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150°C amorphous silicon thin-film transistor technology for polyimide substrates. / Gleskova, H.; Wagner, S.; Gašparík, V.; Kováč, P.

In: Journal of the Electrochemical Society, Vol. 148, No. 7, 01.07.2001, p. G370-G374.

Research output: Contribution to journalArticle

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