150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Helena Gleskova; S. Wagner; V. Gasparik; P. Kovac

150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Helena Gleskova, S. Wagner, V. Gasparik, P. Kovac

Electronic And Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Original language	English
Title of host publication	Book of extended abstracts
Subtitle of host publication	workshop on solid state surfaces and interfaces II (SSSI-II)
Editors	E. Pincik
Place of Publication	Bratislava
Pages	24
Publication status	Published - 2000

Keywords

150-degrees-C
silicon nitride
plasma enhanced
chemical vapor deposition
amorphous silicon thin-film transistors
polyimide substrates

Cite this

@inproceedings{8ae1383009694d26988897ab42810e54,

title = "150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates",

abstract = "This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates",

keywords = "150-degrees-C, silicon nitride , plasma enhanced, chemical vapor deposition, amorphous silicon thin-film transistors, polyimide substrates",

author = "Helena Gleskova and S. Wagner and V. Gasparik and P. Kovac",

year = "2000",

language = "English",

pages = "24",

editor = "E. Pincik",

booktitle = "Book of extended abstracts",

}

150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. / Gleskova, Helena; Wagner, S.; Gasparik, V. et al.

Book of extended abstracts: workshop on solid state surfaces and interfaces II (SSSI-II). ed. / E. Pincik. Bratislava, 2000. p. 24.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

AU - Gleskova, Helena

AU - Wagner, S.

AU - Gasparik, V.

AU - Kovac, P.

PY - 2000

Y1 - 2000

N2 - This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

AB - This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

KW - 150-degrees-C

KW - silicon nitride

KW - plasma enhanced

KW - chemical vapor deposition

KW - amorphous silicon thin-film transistors

KW - polyimide substrates

M3 - Conference contribution book

SP - 24

BT - Book of extended abstracts

A2 - Pincik, E.

CY - Bratislava

ER -

150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Abstract

Keywords

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Cite this