150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Helena Gleskova, S. Wagner, V. Gasparik, P. Kovac

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates
Original languageEnglish
Title of host publicationBook of extended abstracts
Subtitle of host publicationworkshop on solid state surfaces and interfaces II (SSSI-II)
EditorsE. Pincik
Place of PublicationBratislava
Pages24
Publication statusPublished - 2000

Keywords

  • 150-degrees-C
  • silicon nitride
  • plasma enhanced
  • chemical vapor deposition
  • amorphous silicon thin-film transistors
  • polyimide substrates

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  • Cite this

    Gleskova, H., Wagner, S., Gasparik, V., & Kovac, P. (2000). 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. In E. Pincik (Ed.), Book of extended abstracts: workshop on solid state surfaces and interfaces II (SSSI-II) (pp. 24). Bratislava.