150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Helena Gleskova, S. Wagner, V. Gasparik, P. Kovac

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates
LanguageEnglish
Title of host publicationBook of extended abstracts
Subtitle of host publicationworkshop on solid state surfaces and interfaces II (SSSI-II)
EditorsE. Pincik
Place of PublicationBratislava
Pages24
Publication statusPublished - 2000

Fingerprint

polyimides
silicon nitrides
amorphous silicon
transistors
vapor deposition
thin films

Keywords

  • 150-degrees-C
  • silicon nitride
  • plasma enhanced
  • chemical vapor deposition
  • amorphous silicon thin-film transistors
  • polyimide substrates

Cite this

Gleskova, H., Wagner, S., Gasparik, V., & Kovac, P. (2000). 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. In E. Pincik (Ed.), Book of extended abstracts: workshop on solid state surfaces and interfaces II (SSSI-II) (pp. 24). Bratislava.
Gleskova, Helena ; Wagner, S. ; Gasparik, V. ; Kovac, P. / 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. Book of extended abstracts: workshop on solid state surfaces and interfaces II (SSSI-II). editor / E. Pincik. Bratislava, 2000. pp. 24
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keywords = "150-degrees-C, silicon nitride , plasma enhanced, chemical vapor deposition, amorphous silicon thin-film transistors, polyimide substrates",
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Gleskova, H, Wagner, S, Gasparik, V & Kovac, P 2000, 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. in E Pincik (ed.), Book of extended abstracts: workshop on solid state surfaces and interfaces II (SSSI-II). Bratislava, pp. 24.

150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. / Gleskova, Helena; Wagner, S.; Gasparik, V.; Kovac, P.

Book of extended abstracts: workshop on solid state surfaces and interfaces II (SSSI-II). ed. / E. Pincik. Bratislava, 2000. p. 24.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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T1 - 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

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AU - Gasparik, V.

AU - Kovac, P.

PY - 2000

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KW - 150-degrees-C

KW - silicon nitride

KW - plasma enhanced

KW - chemical vapor deposition

KW - amorphous silicon thin-film transistors

KW - polyimide substrates

M3 - Conference contribution book

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BT - Book of extended abstracts

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Gleskova H, Wagner S, Gasparik V, Kovac P. 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. In Pincik E, editor, Book of extended abstracts: workshop on solid state surfaces and interfaces II (SSSI-II). Bratislava. 2000. p. 24