~1400-nm continuous-wave diamond Raman laser intracavity-pumped by an InGaAs semiconductor disk laser

R. Casula, D. C. Parrotta, A. J. Kemp, J.-P. Penttinen, T. Leinonen, M. Guina, J. E. Hastie

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Abstract

We present a ~1400nm-emitting diamond Raman laser intracavity-pumped by an ~1180nm semiconductor disk laser. We measured a maximum output power of 2.3 W at ~1400nm with an output coupling of 3.5%. The Raman laser was tunable from 1373 to 1415nm using a 4-mm-thick birefringent filter.
Original languageEnglish
Number of pages1
Publication statusPublished - 21 Aug 2016
Event7th EPS-QEOD Europhoton Conference: Solid State, Fibre, and Waveguide Coherent Light Sources - Vienna, Austria
Duration: 21 Aug 201626 Aug 2016

Conference

Conference7th EPS-QEOD Europhoton Conference
Abbreviated title7th Europhoton
CountryAustria
CityVienna
Period21/08/1626/08/16

Keywords

  • diamond Raman laser
  • VECSEL
  • continuous wave
  • semiconductor disk laser
  • Raman conversion
  • wavelength

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    1.4 µm continuous-wave diamond Raman laser

    Casula, R., Penttinen, J-P., Kemp, A. J., Guina, M. & Hastie, J. E., 11 Dec 2017, In : Optics Express. 25, 25, p. 31377-31383 6 p.

    Research output: Contribution to journalArticle

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  • 8 Citations (Scopus)
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    InGaAs-QW VECSEL emitting >1300nm via intracavity Raman conversion

    Parrotta, D. C., Casula, R., Penttinen, J-P., Leinonen, T., Kemp, A. J., Guina, M. & Hastie, J. E., 10 Mar 2016, In : Proceedings of SPIE. 9734, 7 p., 97340O.

    Research output: Contribution to journalArticle

    Open Access
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  • 4 Citations (Scopus)
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    Cite this

    Casula, R., Parrotta, D. C., Kemp, A. J., Penttinen, J-P., Leinonen, T., Guina, M., & Hastie, J. E. (2016). ~1400-nm continuous-wave diamond Raman laser intracavity-pumped by an InGaAs semiconductor disk laser. 7th EPS-QEOD Europhoton Conference, Vienna, Austria.