1.3um GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

S. Calvez; A.H. Clark; J.M. Hopkins; R. Macaluso; P. Merlin; H.D. Sun; M.D. Dawson; T. Jouhti; M. Pessa

doi:10.1049/el:20030119

1.3um GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

S. Calvez, A.H. Clark, J.M. Hopkins, R. Macaluso, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 µm. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth was obtained at 12.8 dB peak gain.

Original language	English
Pages (from-to)	100-102
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	1
DOIs	https://doi.org/10.1049/el:20030119
Publication status	Published - 2003

Keywords

semiconductors
photonics
optics
quantum electronics
applied physics

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10.1049/el:20030119

Cite this

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abstract = "A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 µm. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth was obtained at 12.8 dB peak gain.",

keywords = "semiconductors, photonics, optics, quantum electronics, applied physics",

author = "S. Calvez and A.H. Clark and J.M. Hopkins and R. Macaluso and P. Merlin and H.D. Sun and M.D. Dawson and T. Jouhti and M. Pessa",

year = "2003",

doi = "10.1049/el:20030119",

language = "English",

volume = "39",

pages = "100--102",

journal = "Electronics Letters",

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T1 - 1.3um GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

AU - Calvez, S.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Macaluso, R.

AU - Merlin, P.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Pessa, M.

PY - 2003

Y1 - 2003

N2 - A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 µm. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth was obtained at 12.8 dB peak gain.

AB - A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 µm. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth was obtained at 12.8 dB peak gain.

KW - semiconductors

KW - photonics

KW - optics

KW - quantum electronics

KW - applied physics

UR - http://dx.doi.org/10.1049/el:20030119

U2 - 10.1049/el:20030119

DO - 10.1049/el:20030119

M3 - Article

VL - 39

SP - 100

EP - 102

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -

1.3um GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

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Keywords

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