Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 100-102 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 39 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2003 |
Fingerprint
Keywords
- semiconductors
- photonics
- optics
- quantum electronics
- applied physics
Cite this
}
1.3um GaInNAs optically-pumped vertical cavity semiconductor optical amplifier. / Calvez, S.; Clark, A.H.; Hopkins, J.M.; Macaluso, R.; Merlin, P.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; Pessa, M.
In: Electronics Letters, Vol. 39, No. 1, 2003, p. 100-102.Research output: Contribution to journal › Article
TY - JOUR
T1 - 1.3um GaInNAs optically-pumped vertical cavity semiconductor optical amplifier
AU - Calvez, S.
AU - Clark, A.H.
AU - Hopkins, J.M.
AU - Macaluso, R.
AU - Merlin, P.
AU - Sun, H.D.
AU - Dawson, M.D.
AU - Jouhti, T.
AU - Pessa, M.
PY - 2003
Y1 - 2003
N2 - A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 µm. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth was obtained at 12.8 dB peak gain.
AB - A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 µm. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth was obtained at 12.8 dB peak gain.
KW - semiconductors
KW - photonics
KW - optics
KW - quantum electronics
KW - applied physics
UR - http://dx.doi.org/10.1049/el:20030119
U2 - 10.1049/el:20030119
DO - 10.1049/el:20030119
M3 - Article
VL - 39
SP - 100
EP - 102
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 1
ER -