1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

S. Calvez, A.H. Clark, J.M. Hopkins, R. Macaluso, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
LanguageEnglish
Title of host publicationProceedings of the International Conference on Indium Phosphide and Related Materials, 2003
PublisherIEEE
Pages243-246
Number of pages3
ISBN (Print)0-7803-7704-4
Publication statusPublished - 2003

Fingerprint

light amplifiers
cavities
amplifiers
diodes
chips
bandwidth
saturation
fibers
output

Keywords

  • semiconductors
  • gallium arsenide
  • indium compounds
  • optical pumping
  • surface emitting lasers
  • optics
  • lasers

Cite this

Calvez, S., Clark, A. H., Hopkins, J. M., Macaluso, R., Merlin, P., Sun, H. D., ... Pessa, M. (2003). 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003 (pp. 243-246). IEEE.
Calvez, S. ; Clark, A.H. ; Hopkins, J.M. ; Macaluso, R. ; Merlin, P. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; Pessa, M. / 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE, 2003. pp. 243-246
@inbook{a290f20a4f0142d5b0e991463bcd6e28,
title = "1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier",
abstract = "We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.",
keywords = "semiconductors, gallium arsenide, indium compounds, optical pumping, surface emitting lasers, optics, lasers",
author = "S. Calvez and A.H. Clark and J.M. Hopkins and R. Macaluso and P. Merlin and H.D. Sun and M.D. Dawson and T. Jouhti and M. Pessa",
year = "2003",
language = "English",
isbn = "0-7803-7704-4",
pages = "243--246",
booktitle = "Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003",
publisher = "IEEE",

}

Calvez, S, Clark, AH, Hopkins, JM, Macaluso, R, Merlin, P, Sun, HD, Dawson, MD, Jouhti, T & Pessa, M 2003, 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. in Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE, pp. 243-246.

1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. / Calvez, S.; Clark, A.H.; Hopkins, J.M.; Macaluso, R.; Merlin, P.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; Pessa, M.

Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE, 2003. p. 243-246.

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

AU - Calvez, S.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Macaluso, R.

AU - Merlin, P.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Pessa, M.

PY - 2003

Y1 - 2003

N2 - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

AB - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

KW - semiconductors

KW - gallium arsenide

KW - indium compounds

KW - optical pumping

KW - surface emitting lasers

KW - optics

KW - lasers

UR - http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=8572

M3 - Chapter

SN - 0-7803-7704-4

SP - 243

EP - 246

BT - Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003

PB - IEEE

ER -

Calvez S, Clark AH, Hopkins JM, Macaluso R, Merlin P, Sun HD et al. 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003. IEEE. 2003. p. 243-246