1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

S. Calvez; A.H. Clark; J.M. Hopkins; R. Macaluso; P. Merlin; H.D. Sun; M.D. Dawson; T. Jouhti; M. Pessa

1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

S. Calvez, A.H. Clark, J.M. Hopkins, R. Macaluso, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

Original language	English
Title of host publication	Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003
Publisher	IEEE
Pages	243-246
Number of pages	3
ISBN (Print)	0-7803-7704-4
Publication status	Published - 2003

Keywords

semiconductors
gallium arsenide
indium compounds
optical pumping
surface emitting lasers
optics
lasers

Cite this

@inbook{a290f20a4f0142d5b0e991463bcd6e28,

title = "1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier",

abstract = "We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.",

keywords = "semiconductors, gallium arsenide, indium compounds, optical pumping, surface emitting lasers, optics, lasers",

author = "S. Calvez and A.H. Clark and J.M. Hopkins and R. Macaluso and P. Merlin and H.D. Sun and M.D. Dawson and T. Jouhti and M. Pessa",

year = "2003",

language = "English",

isbn = "0-7803-7704-4",

pages = "243--246",

booktitle = "Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003",

publisher = "IEEE",

}

TY - CHAP

T1 - 1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

AU - Calvez, S.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Macaluso, R.

AU - Merlin, P.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Pessa, M.

PY - 2003

Y1 - 2003

N2 - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

AB - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

KW - semiconductors

KW - gallium arsenide

KW - indium compounds

KW - optical pumping

KW - surface emitting lasers

KW - optics

KW - lasers

UR - http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=8572

M3 - Chapter

SN - 0-7803-7704-4

SP - 243

EP - 246

BT - Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003

PB - IEEE

ER -

1.3um GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Abstract

Keywords

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