1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

S. Calvez, A.H. Clark, J.M. Hopkins, R. Macaluso, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti, IEEE, IEEE

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
Original languageEnglish
Title of host publicationIndium Phosphide and Related Materials, 2003. International Conference on
PublisherIEEE
Pages243-246
Number of pages3
ISBN (Print)0-7803-7704-4
Publication statusPublished - 2003

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Keywords

  • III-V semiconductors
  • gallium arsenide
  • indium compounds
  • optical pumping
  • semiconductor device measurement
  • surface emitting lasers
  • GaInNAs
  • GaInNAs monolithic vertical-cavity semiconductor optical amplifier
  • on-chip gain
  • optical-pumping

Cite this

Calvez, S., Clark, A. H., Hopkins, J. M., Macaluso, R., Merlin, P., Sun, H. D., ... IEEE (2003). 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In Indium Phosphide and Related Materials, 2003. International Conference on (pp. 243-246). IEEE.