1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

S. Calvez; A.H. Clark; J.M. Hopkins; R. Macaluso; P. Merlin; H.D. Sun; M.D. Dawson; T. Jouhti; IEEE; IEEE

1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

S. Calvez, A.H. Clark, J.M. Hopkins, R. Macaluso, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti, IEEE, IEEE

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

Original language	English
Title of host publication	Indium Phosphide and Related Materials, 2003. International Conference on
Publisher	IEEE
Pages	243-246
Number of pages	3
ISBN (Print)	0-7803-7704-4
Publication status	Published - 2003

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Keywords

III-V semiconductors
gallium arsenide
indium compounds
optical pumping
semiconductor device measurement
surface emitting lasers
GaInNAs
GaInNAs monolithic vertical-cavity semiconductor optical amplifier
on-chip gain
optical-pumping

Cite this

Calvez, S., Clark, A. H., Hopkins, J. M., Macaluso, R., Merlin, P., Sun, H. D., ... IEEE (2003). 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In Indium Phosphide and Related Materials, 2003. International Conference on (pp. 243-246). IEEE.

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title = "1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier",

abstract = "We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.",

keywords = "III-V semiconductors, gallium arsenide, indium compounds, optical pumping, semiconductor device measurement, surface emitting lasers, GaInNAs, GaInNAs monolithic vertical-cavity semiconductor optical amplifier, on-chip gain, optical-pumping",

author = "S. Calvez and A.H. Clark and J.M. Hopkins and R. Macaluso and P. Merlin and H.D. Sun and M.D. Dawson and T. Jouhti and IEEE and IEEE",

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year = "2003",

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pages = "243--246",

booktitle = "Indium Phosphide and Related Materials, 2003. International Conference on",

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1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. / Calvez, S.; Clark, A.H.; Hopkins, J.M.; Macaluso, R.; Merlin, P.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; IEEE; IEEE.

Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, 2003. p. 243-246.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

TY - CHAP

T1 - 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

AU - Calvez, S.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Macaluso, R.

AU - Merlin, P.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - IEEE

N1 - Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.

PY - 2003

Y1 - 2003

N2 - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

AB - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

KW - III-V semiconductors

KW - gallium arsenide

KW - indium compounds

KW - optical pumping

KW - semiconductor device measurement

KW - surface emitting lasers

KW - GaInNAs

KW - GaInNAs monolithic vertical-cavity semiconductor optical amplifier

KW - on-chip gain

KW - optical-pumping

UR - http://dx.doi.org/10.1109/ICIPRM.2003.1205360

M3 - Chapter

SN - 0-7803-7704-4

SP - 243

EP - 246

BT - Indium Phosphide and Related Materials, 2003. International Conference on

PB - IEEE

ER -

Access to Document

http://dx.doi.org/10.1109/ICIPRM.2003.1205360