1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

S. Calvez, A.H. Clark, J.M. Hopkins, R. Macaluso, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti, IEEE, IEEE

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
LanguageEnglish
Title of host publicationIndium Phosphide and Related Materials, 2003. International Conference on
PublisherIEEE
Pages243-246
Number of pages3
ISBN (Print)0-7803-7704-4
Publication statusPublished - 2003

Fingerprint

light amplifiers
micrometers
cavities
amplifiers
diodes
chips
bandwidth
saturation
fibers
output

Keywords

  • III-V semiconductors
  • gallium arsenide
  • indium compounds
  • optical pumping
  • semiconductor device measurement
  • surface emitting lasers
  • GaInNAs
  • GaInNAs monolithic vertical-cavity semiconductor optical amplifier
  • on-chip gain
  • optical-pumping

Cite this

Calvez, S., Clark, A. H., Hopkins, J. M., Macaluso, R., Merlin, P., Sun, H. D., ... IEEE (2003). 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In Indium Phosphide and Related Materials, 2003. International Conference on (pp. 243-246). IEEE.
Calvez, S. ; Clark, A.H. ; Hopkins, J.M. ; Macaluso, R. ; Merlin, P. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; IEEE ; IEEE. / 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, 2003. pp. 243-246
@inbook{a8bf73cd02724ab99de8fa94063f4537,
title = "1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier",
abstract = "We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.",
keywords = "III-V semiconductors, gallium arsenide, indium compounds, optical pumping, semiconductor device measurement, surface emitting lasers, GaInNAs, GaInNAs monolithic vertical-cavity semiconductor optical amplifier, on-chip gain, optical-pumping",
author = "S. Calvez and A.H. Clark and J.M. Hopkins and R. Macaluso and P. Merlin and H.D. Sun and M.D. Dawson and T. Jouhti and IEEE and IEEE",
note = "Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.",
year = "2003",
language = "English",
isbn = "0-7803-7704-4",
pages = "243--246",
booktitle = "Indium Phosphide and Related Materials, 2003. International Conference on",
publisher = "IEEE",

}

Calvez, S, Clark, AH, Hopkins, JM, Macaluso, R, Merlin, P, Sun, HD, Dawson, MD, Jouhti, T, IEEE & IEEE 2003, 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. in Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, pp. 243-246.

1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. / Calvez, S.; Clark, A.H.; Hopkins, J.M.; Macaluso, R.; Merlin, P.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; IEEE; IEEE.

Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, 2003. p. 243-246.

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

AU - Calvez, S.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Macaluso, R.

AU - Merlin, P.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - IEEE

AU - IEEE

N1 - Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.

PY - 2003

Y1 - 2003

N2 - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

AB - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

KW - III-V semiconductors

KW - gallium arsenide

KW - indium compounds

KW - optical pumping

KW - semiconductor device measurement

KW - surface emitting lasers

KW - GaInNAs

KW - GaInNAs monolithic vertical-cavity semiconductor optical amplifier

KW - on-chip gain

KW - optical-pumping

UR - http://dx.doi.org/10.1109/ICIPRM.2003.1205360

M3 - Chapter

SN - 0-7803-7704-4

SP - 243

EP - 246

BT - Indium Phosphide and Related Materials, 2003. International Conference on

PB - IEEE

ER -

Calvez S, Clark AH, Hopkins JM, Macaluso R, Merlin P, Sun HD et al. 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In Indium Phosphide and Related Materials, 2003. International Conference on. IEEE. 2003. p. 243-246