Abstract
| Language | English |
|---|---|
| Title of host publication | Indium Phosphide and Related Materials, 2003. International Conference on |
| Publisher | IEEE |
| Pages | 243-246 |
| Number of pages | 3 |
| ISBN (Print) | 0-7803-7704-4 |
| Publication status | Published - 2003 |
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Keywords
- III-V semiconductors
- gallium arsenide
- indium compounds
- optical pumping
- semiconductor device measurement
- surface emitting lasers
- GaInNAs
- GaInNAs monolithic vertical-cavity semiconductor optical amplifier
- on-chip gain
- optical-pumping
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1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. / Calvez, S.; Clark, A.H.; Hopkins, J.M.; Macaluso, R.; Merlin, P.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; IEEE; IEEE.
Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, 2003. p. 243-246.Research output: Chapter in Book/Report/Conference proceeding › Chapter
TY - CHAP
T1 - 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier
AU - Calvez, S.
AU - Clark, A.H.
AU - Hopkins, J.M.
AU - Macaluso, R.
AU - Merlin, P.
AU - Sun, H.D.
AU - Dawson, M.D.
AU - Jouhti, T.
AU - IEEE
AU - IEEE
N1 - Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
PY - 2003
Y1 - 2003
N2 - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
AB - We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
KW - III-V semiconductors
KW - gallium arsenide
KW - indium compounds
KW - optical pumping
KW - semiconductor device measurement
KW - surface emitting lasers
KW - GaInNAs
KW - GaInNAs monolithic vertical-cavity semiconductor optical amplifier
KW - on-chip gain
KW - optical-pumping
UR - http://dx.doi.org/10.1109/ICIPRM.2003.1205360
M3 - Chapter
SN - 0-7803-7704-4
SP - 243
EP - 246
BT - Indium Phosphide and Related Materials, 2003. International Conference on
PB - IEEE
ER -