1.3-μm GaInNAs surface-normal devices

S. Calvez, N. Laurand, S.A. Smith, A.H. Clark, J.M. Hopkins, H.D. Sun, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 μm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-μm VECSELs capillary-bonded to diamond heatspreader platelets. In a conventional three-mirror air-spaced laser cavity up to 0.6 W of TEM00 output power was obtained. With the outer surface of the diamond platelet coated to form a dielectric output coupler mirror, it was possible to obtain the first monolithic microchip operation of a GaInNAs VECSEL, where a Gaussian beam with output power up to 120 mW was obtained. The influence of temperature on the performance of a six-quantum-well VCSOA with on-chip gain values of up to 16 dB was also reported. It reveals that on-chip gain of 9 dB can be achieved over a range of 85°C, allowing the amplifier characteristics to be tuned over more than 9.5 nm. Further investigations of the influence of optical feedback on the performance of these vertical amplifiers demonstrate that a three-mirror analysis explains the observed phenomena.
LanguageEnglish
Pages442-446
Number of pages5
JournalIEE Proceedings Optoelectronics
Volume151
Issue number5
DOIs
Publication statusPublished - 27 Oct 2004

Fingerprint

Surface emitting lasers
Mirrors
cavities
surface emitting lasers
Semiconductor optical amplifiers
Platelets
Diamonds
mirrors
platelets
light amplifiers
output
Optical feedback
amplifiers
diamonds
chips
Gaussian beams
Laser resonators
Semiconductor quantum wells
Bragg reflectors
Diodes

Keywords

  • GaInNAs devices
  • surface-normal devices
  • GalnNAs/GaAs active regions
  • AlGaAs Bragg mirror technology
  • diode-pumped VECSEL
  • vertical external-cavity surface emitting lasers
  • vertical cavity semiconductor optical amplifiers
  • capillary bonding
  • diamond heatspreader platelets
  • three-mirror laser cavity
  • air-spaced laser cavity
  • dielectric output coupler mirror
  • monolithic microchip operation
  • Gaussian beam
  • six-quantum-well VCSOA
  • on-chip gain
  • amplifier tuning
  • optical feedback
  • GaInNAs-GaAs

Cite this

Calvez, S., Laurand, N., Smith, S. A., Clark, A. H., Hopkins, J. M., Sun, H. D., ... Pessa, M. (2004). 1.3-μm GaInNAs surface-normal devices. IEE Proceedings Optoelectronics, 151(5), 442-446. https://doi.org/10.1049/ip-opt:20040868
Calvez, S. ; Laurand, N. ; Smith, S.A. ; Clark, A.H. ; Hopkins, J.M. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; Kontinnen, J. ; Pessa, M. / 1.3-μm GaInNAs surface-normal devices. In: IEE Proceedings Optoelectronics. 2004 ; Vol. 151, No. 5. pp. 442-446.
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abstract = "The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 μm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-μm VECSELs capillary-bonded to diamond heatspreader platelets. In a conventional three-mirror air-spaced laser cavity up to 0.6 W of TEM00 output power was obtained. With the outer surface of the diamond platelet coated to form a dielectric output coupler mirror, it was possible to obtain the first monolithic microchip operation of a GaInNAs VECSEL, where a Gaussian beam with output power up to 120 mW was obtained. The influence of temperature on the performance of a six-quantum-well VCSOA with on-chip gain values of up to 16 dB was also reported. It reveals that on-chip gain of 9 dB can be achieved over a range of 85°C, allowing the amplifier characteristics to be tuned over more than 9.5 nm. Further investigations of the influence of optical feedback on the performance of these vertical amplifiers demonstrate that a three-mirror analysis explains the observed phenomena.",
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Calvez, S, Laurand, N, Smith, SA, Clark, AH, Hopkins, JM, Sun, HD, Dawson, MD, Jouhti, T, Kontinnen, J & Pessa, M 2004, '1.3-μm GaInNAs surface-normal devices' IEE Proceedings Optoelectronics, vol. 151, no. 5, pp. 442-446. https://doi.org/10.1049/ip-opt:20040868

1.3-μm GaInNAs surface-normal devices. / Calvez, S.; Laurand, N.; Smith, S.A.; Clark, A.H.; Hopkins, J.M.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; Kontinnen, J.; Pessa, M.

In: IEE Proceedings Optoelectronics, Vol. 151, No. 5, 27.10.2004, p. 442-446.

Research output: Contribution to journalArticle

TY - JOUR

T1 - 1.3-μm GaInNAs surface-normal devices

AU - Calvez, S.

AU - Laurand, N.

AU - Smith, S.A.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Kontinnen, J.

AU - Pessa, M.

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Y1 - 2004/10/27

N2 - The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 μm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-μm VECSELs capillary-bonded to diamond heatspreader platelets. In a conventional three-mirror air-spaced laser cavity up to 0.6 W of TEM00 output power was obtained. With the outer surface of the diamond platelet coated to form a dielectric output coupler mirror, it was possible to obtain the first monolithic microchip operation of a GaInNAs VECSEL, where a Gaussian beam with output power up to 120 mW was obtained. The influence of temperature on the performance of a six-quantum-well VCSOA with on-chip gain values of up to 16 dB was also reported. It reveals that on-chip gain of 9 dB can be achieved over a range of 85°C, allowing the amplifier characteristics to be tuned over more than 9.5 nm. Further investigations of the influence of optical feedback on the performance of these vertical amplifiers demonstrate that a three-mirror analysis explains the observed phenomena.

AB - The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 μm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-μm VECSELs capillary-bonded to diamond heatspreader platelets. In a conventional three-mirror air-spaced laser cavity up to 0.6 W of TEM00 output power was obtained. With the outer surface of the diamond platelet coated to form a dielectric output coupler mirror, it was possible to obtain the first monolithic microchip operation of a GaInNAs VECSEL, where a Gaussian beam with output power up to 120 mW was obtained. The influence of temperature on the performance of a six-quantum-well VCSOA with on-chip gain values of up to 16 dB was also reported. It reveals that on-chip gain of 9 dB can be achieved over a range of 85°C, allowing the amplifier characteristics to be tuned over more than 9.5 nm. Further investigations of the influence of optical feedback on the performance of these vertical amplifiers demonstrate that a three-mirror analysis explains the observed phenomena.

KW - GaInNAs devices

KW - surface-normal devices

KW - GalnNAs/GaAs active regions

KW - AlGaAs Bragg mirror technology

KW - diode-pumped VECSEL

KW - vertical external-cavity surface emitting lasers

KW - vertical cavity semiconductor optical amplifiers

KW - capillary bonding

KW - diamond heatspreader platelets

KW - three-mirror laser cavity

KW - air-spaced laser cavity

KW - dielectric output coupler mirror

KW - monolithic microchip operation

KW - Gaussian beam

KW - six-quantum-well VCSOA

KW - on-chip gain

KW - amplifier tuning

KW - optical feedback

KW - GaInNAs-GaAs

U2 - 10.1049/ip-opt:20040868

DO - 10.1049/ip-opt:20040868

M3 - Article

VL - 151

SP - 442

EP - 446

JO - IEE Proceedings Optoelectronics

T2 - IEE Proceedings Optoelectronics

JF - IEE Proceedings Optoelectronics

SN - 1350-2433

IS - 5

ER -

Calvez S, Laurand N, Smith SA, Clark AH, Hopkins JM, Sun HD et al. 1.3-μm GaInNAs surface-normal devices. IEE Proceedings Optoelectronics. 2004 Oct 27;151(5):442-446. https://doi.org/10.1049/ip-opt:20040868