10Gb/s modulators drivers with local feedback networks

Day-Uei Li; Chia-Ming Tsai

doi:10.1109/JSSC.2006.872878

10Gb/s modulators drivers with local feedback networks

Day-Uei Li, Chia-Ming Tsai

Strathclyde Institute Of Pharmacy And Biomedical Sciences

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A novel intrinsic collector-base capacitance (C/sub CB/) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-/spl mu/m SiGe BiCMOS process could generate 9 V/sub PP/ differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V/sub PP/ in 0.18-/spl mu/m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported silicon-based drivers.

Original language	English
Pages (from-to)	1025-1030
Number of pages	6
Journal	IEEE Journal of Solid-State Circuits
Volume	41
Issue number	5
Early online date	24 Apr 2006
DOIs	https://doi.org/10.1109/JSSC.2006.872878
Publication status	Published - 31 May 2006

Keywords

intrinsic collector-base capacitance
intrinsic drain-gate capacitance
laser drivers
modulator drivers
silicon-based
Ge-Si alloys
BiCMOS integrated circuits

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10.1109/JSSC.2006.872878

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title = "10Gb/s modulators drivers with local feedback networks",

abstract = "A novel intrinsic collector-base capacitance (C/sub CB/) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-/spl mu/m SiGe BiCMOS process could generate 9 V/sub PP/ differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V/sub PP/ in 0.18-/spl mu/m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported silicon-based drivers.",

keywords = "intrinsic collector-base capacitance, intrinsic drain-gate capacitance, laser drivers, modulator drivers, silicon-based, Ge-Si alloys, BiCMOS integrated circuits",

author = "Day-Uei Li and Chia-Ming Tsai",

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T1 - 10Gb/s modulators drivers with local feedback networks

AU - Li, Day-Uei

AU - Tsai, Chia-Ming

PY - 2006/5/31

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N2 - A novel intrinsic collector-base capacitance (C/sub CB/) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-/spl mu/m SiGe BiCMOS process could generate 9 V/sub PP/ differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V/sub PP/ in 0.18-/spl mu/m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported silicon-based drivers.

AB - A novel intrinsic collector-base capacitance (C/sub CB/) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-/spl mu/m SiGe BiCMOS process could generate 9 V/sub PP/ differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V/sub PP/ in 0.18-/spl mu/m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported silicon-based drivers.

KW - intrinsic collector-base capacitance

KW - intrinsic drain-gate capacitance

KW - laser drivers

KW - modulator drivers

KW - silicon-based

KW - Ge-Si alloys

KW - BiCMOS integrated circuits

U2 - 10.1109/JSSC.2006.872878

DO - 10.1109/JSSC.2006.872878

M3 - Article

SN - 0018-9200

VL - 41

SP - 1025

EP - 1030

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 5

ER -

10Gb/s modulators drivers with local feedback networks

Abstract

Keywords

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