10Gb/s modulators drivers with local feedback networks

Day-Uei Li, Chia-Ming Tsai

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A novel intrinsic collector-base capacitance (C/sub CB/) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-/spl mu/m SiGe BiCMOS process could generate 9 V/sub PP/ differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V/sub PP/ in 0.18-/spl mu/m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported silicon-based drivers.
LanguageEnglish
Pages1025-1030
Number of pages6
JournalIEEE Journal of Solid-State Circuits
Volume41
Issue number5
Early online date24 Apr 2006
DOIs
Publication statusPublished - 31 May 2006

Fingerprint

Modulators
Capacitance
Feedback
Electric power utilization
Silicon
Networks (circuits)
Electric potential

Keywords

  • intrinsic collector-base capacitance
  • intrinsic drain-gate capacitance
  • laser drivers
  • modulator drivers
  • silicon-based
  • Ge-Si alloys
  • BiCMOS integrated circuits

Cite this

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title = "10Gb/s modulators drivers with local feedback networks",
abstract = "A novel intrinsic collector-base capacitance (C/sub CB/) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-/spl mu/m SiGe BiCMOS process could generate 9 V/sub PP/ differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V/sub PP/ in 0.18-/spl mu/m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported silicon-based drivers.",
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10Gb/s modulators drivers with local feedback networks. / Li, Day-Uei; Tsai, Chia-Ming.

In: IEEE Journal of Solid-State Circuits, Vol. 41, No. 5, 31.05.2006, p. 1025-1030.

Research output: Contribution to journalArticle

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KW - intrinsic collector-base capacitance

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KW - silicon-based

KW - Ge-Si alloys

KW - BiCMOS integrated circuits

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