10-Gb/s single-ended laser driver in 0.35um SiGe BiCMOS technology

Chia-Ming Tsai; Li-Ren Huang; Day-Uei Li; Chien-Fu Chang

doi:10.1109/ESSCIRC.2003.1257129

10-Gb/s single-ended laser driver in 0.35um SiGe BiCMOS technology

Chia-Ming Tsai, Li-Ren Huang, Day-Uei Li, Chien-Fu Chang

Strathclyde Institute Of Pharmacy And Biomedical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

6 Citations (Scopus)

Abstract

This paper presents a high-efficiency 10 Gb/s single-ended laser driver using a novel operating point control scheme. The cascade output configuration is used to reduce Miller capacitance and extend driving capability. To reduce the speed degradation caused by the ground inductance, a special but simple technique is employed while integrating the whole driver design. The laser driver is capable of driving 100mA modulation current with total power consumption, excluding the modulation current, of less than 140mW at 3.3V.

Original language	English
Title of host publication	Proceedings of the 29th European Solid-State Circuits Conference (ESSCIRC), 2003
Editors	Jose Franca, Rudolf Koch
Place of Publication	Piscataway
Publisher	IEEE
Pages	289-292
Number of pages	4
ISBN (Print)	0780379950
DOIs	https://doi.org/10.1109/ESSCIRC.2003.1257129
Publication status	Published - 16 Sept 2003
Event	29th European Solid-state Circuits Conference - Estoril, Portugal Duration: 16 Sept 2003 → 18 Sept 2003

Conference

Conference	29th European Solid-state Circuits Conference
Abbreviated title	ESSCIRC 2003
Country/Territory	Portugal
City	Estoril
Period	16/09/03 → 18/09/03

Keywords

silicon germanium
germanium silicon alloys
bicmos integrated circuits
quantum cascade lasers
optical control
capacitance
degradation
inductance
power lasers
energy consumption

Access to Document

10.1109/ESSCIRC.2003.1257129

Cite this

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title = "10-Gb/s single-ended laser driver in 0.35um SiGe BiCMOS technology",

abstract = "This paper presents a high-efficiency 10 Gb/s single-ended laser driver using a novel operating point control scheme. The cascade output configuration is used to reduce Miller capacitance and extend driving capability. To reduce the speed degradation caused by the ground inductance, a special but simple technique is employed while integrating the whole driver design. The laser driver is capable of driving 100mA modulation current with total power consumption, excluding the modulation current, of less than 140mW at 3.3V.",

keywords = "silicon germanium, germanium silicon alloys, bicmos integrated circuits, quantum cascade lasers, optical control, capacitance, degradation, inductance, power lasers, energy consumption",

author = "Chia-Ming Tsai and Li-Ren Huang and Day-Uei Li and Chien-Fu Chang",

year = "2003",

month = sep,

day = "16",

doi = "10.1109/ESSCIRC.2003.1257129",

language = "English",

isbn = "0780379950",

pages = "289--292",

editor = "Jose Franca and Rudolf Koch",

booktitle = "Proceedings of the 29th European Solid-State Circuits Conference (ESSCIRC), 2003",

publisher = "IEEE",

note = "29th European Solid-state Circuits Conference , ESSCIRC 2003 ; Conference date: 16-09-2003 Through 18-09-2003",

}

Tsai, C-M, Huang, L-R, Li, D-U & Chang, C-F 2003, 10-Gb/s single-ended laser driver in 0.35um SiGe BiCMOS technology. in J Franca & R Koch (eds), Proceedings of the 29th European Solid-State Circuits Conference (ESSCIRC), 2003. IEEE, Piscataway, pp. 289-292, 29th European Solid-state Circuits Conference , Estoril, Portugal, 16/09/03. https://doi.org/10.1109/ESSCIRC.2003.1257129

TY - GEN

T1 - 10-Gb/s single-ended laser driver in 0.35um SiGe BiCMOS technology

AU - Tsai, Chia-Ming

AU - Huang, Li-Ren

AU - Li, Day-Uei

AU - Chang, Chien-Fu

PY - 2003/9/16

Y1 - 2003/9/16

N2 - This paper presents a high-efficiency 10 Gb/s single-ended laser driver using a novel operating point control scheme. The cascade output configuration is used to reduce Miller capacitance and extend driving capability. To reduce the speed degradation caused by the ground inductance, a special but simple technique is employed while integrating the whole driver design. The laser driver is capable of driving 100mA modulation current with total power consumption, excluding the modulation current, of less than 140mW at 3.3V.

AB - This paper presents a high-efficiency 10 Gb/s single-ended laser driver using a novel operating point control scheme. The cascade output configuration is used to reduce Miller capacitance and extend driving capability. To reduce the speed degradation caused by the ground inductance, a special but simple technique is employed while integrating the whole driver design. The laser driver is capable of driving 100mA modulation current with total power consumption, excluding the modulation current, of less than 140mW at 3.3V.

KW - silicon germanium

KW - germanium silicon alloys

KW - bicmos integrated circuits

KW - quantum cascade lasers

KW - optical control

KW - capacitance

KW - degradation

KW - inductance

KW - power lasers

KW - energy consumption

U2 - 10.1109/ESSCIRC.2003.1257129

DO - 10.1109/ESSCIRC.2003.1257129

M3 - Conference contribution book

SN - 0780379950

SP - 289

EP - 292

BT - Proceedings of the 29th European Solid-State Circuits Conference (ESSCIRC), 2003

A2 - Franca, Jose

A2 - Koch, Rudolf

PB - IEEE

CY - Piscataway

T2 - 29th European Solid-state Circuits Conference

Y2 - 16 September 2003 through 18 September 2003

ER -

10-Gb/s single-ended laser driver in 0.35um SiGe BiCMOS technology

Abstract

Conference

Keywords

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