1 Gbps free-space deep ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm

Xiangyu He, Enyuan Xie, Mohamed Sufyan Islim, Ardimas Andi Purwita, Jonathan J. D. McKendry, Erdan Gu, Harald Haas, Martin D. Dawson

Research output: Contribution to journalArticle

Abstract

Deep ultraviolet (DUV) communications have many advantages including low background noise, large coverage area enabling non-line-of-sight (NLOS) communications and high security. However, so far the reported data transmission rates of deep UV communications are less than 100 Mbps, which is mainly limited by the low modulation bandwidth of the light sources used. In this paper we present the III-nitride micro-light emitting diodes (µLEDs) emitting in the UV-C region and their applications as light sources for deep UV communications. These µLEDs are in trapezoidal pixel form with emission area of 565.5µm^2 (equivalent area to disk shaped LEDs of diameter 26.8µm) and can sustain a high current density up to 3400 A/cm^2. At this current density, a UV-C µLED produces an optical power of 196 µW. The measured modulation bandwidth of the UV-C µLEDs increases linearly with the driving current density. At a current density of 70.73 A/cm^2, the UV-C µLED has a 3-dB electrical modulation bandwidth of 438 MHz which is 15 times higher than the reported bandwidth of deep UV LEDs. By further increasing the driving current densities, even higher modulation bandwidths are expected although those have not been directly demonstrated due to the cut-off frequency of the commercial avalanche photodiode used for the measurement. A deep UV communication system using the fabricated µLED as the light source is further demonstrated. At a 0.3 m distance, up to 744 Mbps and 1.02 Gbps error-free data transmission rates are achieved assuming on–off-keying (OOK) and orthogonal frequency division multiplexing (OFDM) modulation schemes, respectively.
LanguageEnglish
Number of pages7
JournalPhotonics Research
Publication statusAccepted/In press - 4 Feb 2019

Fingerprint

deep space
Nitrides
nitrides
Light emitting diodes
Current density
light emitting diodes
communication
Modulation
current density
bandwidth
Bandwidth
modulation
Communication
Light sources
light sources
data transmission
Data communication systems
keying
frequency division multiplexing
Avalanche photodiodes

Keywords

  • low modulation bandwidth
  • deep ultraviolet
  • ultraviolet communication systems
  • UV
  • micro light-emitting diodes (micro-LEDs)

Cite this

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title = "1 Gbps free-space deep ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm",
abstract = "Deep ultraviolet (DUV) communications have many advantages including low background noise, large coverage area enabling non-line-of-sight (NLOS) communications and high security. However, so far the reported data transmission rates of deep UV communications are less than 100 Mbps, which is mainly limited by the low modulation bandwidth of the light sources used. In this paper we present the III-nitride micro-light emitting diodes (µLEDs) emitting in the UV-C region and their applications as light sources for deep UV communications. These µLEDs are in trapezoidal pixel form with emission area of 565.5µm^2 (equivalent area to disk shaped LEDs of diameter 26.8µm) and can sustain a high current density up to 3400 A/cm^2. At this current density, a UV-C µLED produces an optical power of 196 µW. The measured modulation bandwidth of the UV-C µLEDs increases linearly with the driving current density. At a current density of 70.73 A/cm^2, the UV-C µLED has a 3-dB electrical modulation bandwidth of 438 MHz which is 15 times higher than the reported bandwidth of deep UV LEDs. By further increasing the driving current densities, even higher modulation bandwidths are expected although those have not been directly demonstrated due to the cut-off frequency of the commercial avalanche photodiode used for the measurement. A deep UV communication system using the fabricated µLED as the light source is further demonstrated. At a 0.3 m distance, up to 744 Mbps and 1.02 Gbps error-free data transmission rates are achieved assuming on–off-keying (OOK) and orthogonal frequency division multiplexing (OFDM) modulation schemes, respectively.",
keywords = "low modulation bandwidth, deep ultraviolet, ultraviolet communication systems, UV, micro light-emitting diodes (micro-LEDs)",
author = "Xiangyu He and Enyuan Xie and Islim, {Mohamed Sufyan} and Purwita, {Ardimas Andi} and McKendry, {Jonathan J. D.} and Erdan Gu and Harald Haas and Dawson, {Martin D.}",
year = "2019",
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journal = "Photonics Research",
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1 Gbps free-space deep ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm. / He, Xiangyu; Xie, Enyuan; Islim, Mohamed Sufyan; Purwita, Ardimas Andi; McKendry, Jonathan J. D.; Gu, Erdan; Haas, Harald; Dawson, Martin D.

In: Photonics Research, 04.02.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - 1 Gbps free-space deep ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm

AU - He, Xiangyu

AU - Xie, Enyuan

AU - Islim, Mohamed Sufyan

AU - Purwita, Ardimas Andi

AU - McKendry, Jonathan J. D.

AU - Gu, Erdan

AU - Haas, Harald

AU - Dawson, Martin D.

PY - 2019/2/4

Y1 - 2019/2/4

N2 - Deep ultraviolet (DUV) communications have many advantages including low background noise, large coverage area enabling non-line-of-sight (NLOS) communications and high security. However, so far the reported data transmission rates of deep UV communications are less than 100 Mbps, which is mainly limited by the low modulation bandwidth of the light sources used. In this paper we present the III-nitride micro-light emitting diodes (µLEDs) emitting in the UV-C region and their applications as light sources for deep UV communications. These µLEDs are in trapezoidal pixel form with emission area of 565.5µm^2 (equivalent area to disk shaped LEDs of diameter 26.8µm) and can sustain a high current density up to 3400 A/cm^2. At this current density, a UV-C µLED produces an optical power of 196 µW. The measured modulation bandwidth of the UV-C µLEDs increases linearly with the driving current density. At a current density of 70.73 A/cm^2, the UV-C µLED has a 3-dB electrical modulation bandwidth of 438 MHz which is 15 times higher than the reported bandwidth of deep UV LEDs. By further increasing the driving current densities, even higher modulation bandwidths are expected although those have not been directly demonstrated due to the cut-off frequency of the commercial avalanche photodiode used for the measurement. A deep UV communication system using the fabricated µLED as the light source is further demonstrated. At a 0.3 m distance, up to 744 Mbps and 1.02 Gbps error-free data transmission rates are achieved assuming on–off-keying (OOK) and orthogonal frequency division multiplexing (OFDM) modulation schemes, respectively.

AB - Deep ultraviolet (DUV) communications have many advantages including low background noise, large coverage area enabling non-line-of-sight (NLOS) communications and high security. However, so far the reported data transmission rates of deep UV communications are less than 100 Mbps, which is mainly limited by the low modulation bandwidth of the light sources used. In this paper we present the III-nitride micro-light emitting diodes (µLEDs) emitting in the UV-C region and their applications as light sources for deep UV communications. These µLEDs are in trapezoidal pixel form with emission area of 565.5µm^2 (equivalent area to disk shaped LEDs of diameter 26.8µm) and can sustain a high current density up to 3400 A/cm^2. At this current density, a UV-C µLED produces an optical power of 196 µW. The measured modulation bandwidth of the UV-C µLEDs increases linearly with the driving current density. At a current density of 70.73 A/cm^2, the UV-C µLED has a 3-dB electrical modulation bandwidth of 438 MHz which is 15 times higher than the reported bandwidth of deep UV LEDs. By further increasing the driving current densities, even higher modulation bandwidths are expected although those have not been directly demonstrated due to the cut-off frequency of the commercial avalanche photodiode used for the measurement. A deep UV communication system using the fabricated µLED as the light source is further demonstrated. At a 0.3 m distance, up to 744 Mbps and 1.02 Gbps error-free data transmission rates are achieved assuming on–off-keying (OOK) and orthogonal frequency division multiplexing (OFDM) modulation schemes, respectively.

KW - low modulation bandwidth

KW - deep ultraviolet

KW - ultraviolet communication systems

KW - UV

KW - micro light-emitting diodes (micro-LEDs)

UR - https://www.osapublishing.org/oe/home.cfm

M3 - Article

JO - Photonics Research

T2 - Photonics Research

JF - Photonics Research

SN - 2327-9125

ER -