1 Gbps free-space deep ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm

Xiangyu He, Enyuan Xie, Mohamed Sufyan Islim, Ardimas Andi Purwita, Jonathan J. D. McKendry, Erdan Gu, Harald Haas, Martin D. Dawson

Research output: Contribution to journalArticle

Abstract

The low modulation bandwidth of deep-ultraviolet (UV) light sources is considered as the main reason limiting the data transmission rate of deep-UV communications. Here, we present high-bandwidth III-nitride microlight- emitting diodes (µLEDs) emitting in the UV-C region and their applications in deep-UV communication systems. The fabricated UV-C µLEDs with 566 µm2 emission area produce an optical power of 196 µW at the 3400 A/cm 2 current density. The measured 3 dB modulation bandwidth of these µLEDs initially increases linearly with the driving current density and then saturates as 438 MHz at a current density of 71 A/cm 2, which is limited by the cutoff frequency of the commercial avalanche photodiode used for the measurement. A deep-UV communication system is further demonstrated. By using the UV-C µLED, up to 800 Mbps and 1.1 Gbps data transmission rates at bit error ratio of 3.8 × 10-3 are achieved assuming on-off keying and orthogonal frequency-division multiplexing modulation schemes, respectively.

LanguageEnglish
PagesB41-B47
Number of pages7
JournalPhotonics Research
Volume7
Issue number7
Early online date6 May 2019
DOIs
Publication statusPublished - 24 Jun 2019

Fingerprint

deep space
Nitrides
nitrides
Light emitting diodes
Current density
light emitting diodes
communication
Modulation
data transmission
current density
bandwidth
Bandwidth
modulation
Data communication systems
telecommunication
Communication
Communication systems
keying
frequency division multiplexing
Avalanche photodiodes

Keywords

  • low modulation bandwidth
  • deep ultraviolet
  • ultraviolet communication systems
  • UV
  • micro light-emitting diodes (micro-LEDs)

Cite this

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title = "1 Gbps free-space deep ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm",
abstract = "The low modulation bandwidth of deep-ultraviolet (UV) light sources is considered as the main reason limiting the data transmission rate of deep-UV communications. Here, we present high-bandwidth III-nitride microlight- emitting diodes (µLEDs) emitting in the UV-C region and their applications in deep-UV communication systems. The fabricated UV-C µLEDs with 566 µm2 emission area produce an optical power of 196 µW at the 3400 A/cm 2 current density. The measured 3 dB modulation bandwidth of these µLEDs initially increases linearly with the driving current density and then saturates as 438 MHz at a current density of 71 A/cm 2, which is limited by the cutoff frequency of the commercial avalanche photodiode used for the measurement. A deep-UV communication system is further demonstrated. By using the UV-C µLED, up to 800 Mbps and 1.1 Gbps data transmission rates at bit error ratio of 3.8 × 10-3 are achieved assuming on-off keying and orthogonal frequency-division multiplexing modulation schemes, respectively.",
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1 Gbps free-space deep ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm. / He, Xiangyu; Xie, Enyuan; Islim, Mohamed Sufyan; Purwita, Ardimas Andi; McKendry, Jonathan J. D.; Gu, Erdan; Haas, Harald; Dawson, Martin D.

In: Photonics Research, Vol. 7, No. 7, 24.06.2019, p. B41-B47.

Research output: Contribution to journalArticle

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AU - McKendry, Jonathan J. D.

AU - Gu, Erdan

AU - Haas, Harald

AU - Dawson, Martin D.

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