A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

J.M. Hopkins; S.A. Smith; C.W. Jeon; H.D. Sun; D. Burns; S. Calvez; M.D. Dawson; T. Jouhti; M. Pessa

doi:10.1049/el:20040049

A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

J.M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, M. Pessa

Research output: Contribution to journal › Article › peer-review

151 Citations (Scopus)

Abstract

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.

Original language	English
Pages (from-to)	30-31
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	1
DOIs	https://doi.org/10.1049/el:20040049
Publication status	Published - Jan 2004

Keywords

distributed Bragg reflectors
surface emitting lasers
quantum well lasers
optical windows
laser mirrors
indium compounds
heat sinks
gallium arsenide
III-V semiconductors
diamond
GaInNAs
vertical external cavity

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10.1049/el:20040049

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title = "A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm",

abstract = "What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader. ",

keywords = "distributed Bragg reflectors, surface emitting lasers , quantum well lasers , optical windows , laser mirrors , indium compounds , heat sinks , gallium arsenide , III-V semiconductors, diamond, GaInNAs, vertical external cavity",

author = "J.M. Hopkins and S.A. Smith and C.W. Jeon and H.D. Sun and D. Burns and S. Calvez and M.D. Dawson and T. Jouhti and M. Pessa",

year = "2004",

month = jan,

doi = "10.1049/el:20040049",

language = "English",

volume = "40",

pages = "30--31",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

AU - Hopkins, J.M.

AU - Smith, S.A.

AU - Jeon, C.W.

AU - Sun, H.D.

AU - Burns, D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Pessa, M.

PY - 2004/1

Y1 - 2004/1

N2 - What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.

AB - What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 μm is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.

KW - distributed Bragg reflectors

KW - surface emitting lasers

KW - quantum well lasers

KW - optical windows

KW - laser mirrors

KW - indium compounds

KW - heat sinks

KW - gallium arsenide

KW - III-V semiconductors

KW - diamond

KW - GaInNAs

KW - vertical external cavity

U2 - 10.1049/el:20040049

DO - 10.1049/el:20040049

M3 - Article

SN - 0013-5194

VL - 40

SP - 30

EP - 31

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

A 0.6W cW GaInNAs vertical external cavity surface-emitting laser at 1.32µm

Abstract

Keywords

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