0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

J.E. Hastie, J.M. Hopkins, S. Calvez, C.W. Jeon, D. Burns, R.H. Abram, E. Riis, A.I. Ferguson, M.D. Dawson

Research output: Contribution to journalArticle

127 Citations (Scopus)


We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.
Original languageEnglish
Pages (from-to)894-896
Number of pages2
JournalIEEE Photonics Technology Letters
Issue number7
Publication statusPublished - 2003



  • semiconductors
  • lasers
  • optical pumping
  • photonics
  • optics
  • quantum electronics

Cite this