0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

J.E. Hastie, J.M. Hopkins, S. Calvez, C.W. Jeon, D. Burns, R.H. Abram, E. Riis, A.I. Ferguson, M.D. Dawson

Research output: Contribution to journalArticle

124 Citations (Scopus)

Abstract

We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.
LanguageEnglish
Pages894-896
Number of pages2
JournalIEEE Photonics Technology Letters
Volume15
Issue number7
DOIs
Publication statusPublished - 2003

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surface emitting lasers
Silicon carbide
Semiconductor lasers
Diodes
semiconductor lasers
diodes
Pumps
silicon carbides
Capillarity
output
Surface emitting lasers
pumps
scaling
Demonstrations
Semiconductor materials
Transmission electron microscopy
Liquids
transmission electron microscopy
cavities
shift

Keywords

  • semiconductors
  • lasers
  • optical pumping
  • photonics
  • optics
  • quantum electronics

Cite this

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title = "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser",
abstract = "We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.",
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year = "2003",
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language = "English",
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0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser. / Hastie, J.E.; Hopkins, J.M.; Calvez, S.; Jeon, C.W.; Burns, D.; Abram, R.H.; Riis, E.; Ferguson, A.I.; Dawson, M.D.

In: IEEE Photonics Technology Letters, Vol. 15, No. 7, 2003, p. 894-896.

Research output: Contribution to journalArticle

TY - JOUR

T1 - 0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

AU - Hastie, J.E.

AU - Hopkins, J.M.

AU - Calvez, S.

AU - Jeon, C.W.

AU - Burns, D.

AU - Abram, R.H.

AU - Riis, E.

AU - Ferguson, A.I.

AU - Dawson, M.D.

PY - 2003

Y1 - 2003

N2 - We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.

AB - We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically contacted to the semiconductor surface. To our knowledge, this is the first demonstration of bonding of SiC to a III-V semiconductor structure using the technique of liquid capillarity. High output power of >0.5 W in a circularly symmetric, TEM/sub 00/ output beam has been achieved with a spectral shift of only 0.6 nm/W of pump power. No thermal rollover was evident up to the highest pump power available, implying significant further output-power scaling potential using this approach.

KW - semiconductors

KW - lasers

KW - optical pumping

KW - photonics

KW - optics

KW - quantum electronics

UR - http://dx.doi.org/10.1109/LPT.2003.813446

U2 - 10.1109/LPT.2003.813446

DO - 10.1109/LPT.2003.813446

M3 - Article

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EP - 896

JO - IEEE Photonics Technology Letters

T2 - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

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ER -