0.5-Gb/s OFDM-based laser data and power transfer using a GaAs photovoltaic cell

John Fakidis*, Stefan Videv, Henning Helmers, Harald Haas

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

50 Citations (Scopus)
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Abstract

In this letter, we demonstrate for the first time the additional capability of high-speed data communication for single-junction photovoltaic (PV) cells. A record 3-dB bandwidth of 24.5 MHz is reported for a gallium arsenide (GaAs) PV cell. The PV cell is shown to achieve a power efficiency of at least 42% when irradiance of 0.46 W/cm2 is received from 847-nm vertical-cavity surface-emitted laser. Optimized bit-and-power-loaded optical orthogonal frequency-division multiplexing (OFDM) is applied to use the communication bandwidth most efficiently. With this, a data rate of 0.5 Gb/s is achieved for a 2-m OFDM-based laser link. To the best of our knowledge, the reported data rates achieved with a GaAs PV cell as the detector are the highest for simultaneous optical wireless information and power transfer.

Original languageEnglish
Pages (from-to)841-844
Number of pages4
JournalIEEE Photonics Technology Letters
Volume30
Issue number9
Early online date12 Mar 2018
DOIs
Publication statusPublished - 1 May 2018

Funding

Manuscript received February 20, 2018; accepted March 2, 2018. Date of publication March 12, 2018; date of current version April 16, 2018. The work of H. Haas was supported by the Engineering and Physical Sciences Research Council through the Established Career Fellowship under Grant EP/K008757/1. (Corresponding author: John Fakidis.) J. Fakidis, S. Videv, and H. Haas are with the Li-Fi Research and Development Center, School of Engineering, Institute for Digital Communications, The University of Edinburgh, Edinburgh EH9 3JL, U.K. (e-mail: [email protected]; [email protected]; [email protected]).

Keywords

  • energy harvesting
  • gallium arsenide
  • OFDM
  • photovoltaic cells
  • vertical cavity surface emitting lasers

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