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Personal profile

Personal Statement

Robert Martin is Professor of Nanoscience at Strathclyde’s Physics Department and Vice-Dean (Research) for the Faculty of Science. He has worked extensively in semiconductor physics and in the application of optical and electron-beam spectroscopies and imaging, having co-authored over 250 refereed publications and three patents. His current interests focus on GaN, AlInN, AlGaN and CuInSe2 materials. Prior to coming to Strathclyde in 1993, he worked on InGaAsP-based electroabsorption modulators and on magnetotransport in Sb-based semiconductors at Oxford University. In 2008, he spent 6 months at the Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA) CNRS laboratory in Valbonne, France working on AlInN materials and GaN-based microcavities.

Researcher ID: A-7127-2010

| e: r.w.martin@strath.ac.uk | t: 0141 548 3466/3132/2309 | u: http://ssd.phys.strath.ac.uk/ |

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Projects 2003 2023

Research Output 1995 2020

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

Walde, S., Hagedorn, S., Coulon, P-M., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-Kumar, G., Trager-Cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R. W., Shields, P. A., Kneissl, M. & 1 others, Weyers, M., 1 Feb 2020, In : Journal of Crystal Growth. 531, 6 p., 125343.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Aluminum Oxide
vapor phase epitaxy

A poly(urethane)-encapsulated benzo[2,3-d:6,7-d']diimidazole organic down-converter for green hybrid LEDs

Wiles, A. A., Bruckbauer, J., Mohammed, N., Cariello, M., Cameron, J., Findlay, N. J., Taylor-Shaw, E., Wallis, D. J., Martin, R. W., Skabara, P. J. & Cooke, G., 6 Feb 2020, In : Materials Chemistry Frontiers . p. 1-9 9 p.

Research output: Contribution to journalArticle

Open Access
Light emitting diodes
Methyl Green
Rare earth elements


Cathodoluminescence and wavelength-dispersive X-ray measurements of InAlGaN

Kusch, G. (Creator), Spasevski, L. (Creator), Edwards, P. (Creator), Martin, R. (Creator), University of Strathclyde, 14 Mar 2019


Data for: "AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy"

Walde, S. (Creator), Hagedorn, S. (Creator), Coulon, P. (Creator), Kusch, G. (Creator), Alasmari, A. M. A. (Creator), Trager-Cowan, C. (Creator), University of Strathclyde, 25 Nov 2019



Characterization of low conductivity wide band gap semiconductors

Author: Kusch, G., 1 Apr 2016

Supervisor: Martin, R. (Supervisor) & Trager-Cowan, C. (Supervisor)

Student thesis: Doctoral Thesis

Composition and luminescence studies of InGaN and InAlN alloys

Author: Taylor-Shaw, E., 1 Apr 2015

Supervisor: Martin, R. (Supervisor) & O'Donnell, K. (Supervisor)

Student thesis: Doctoral Thesis

Activities 2006 2020

SPIE Photonics West 2020

Robert Martin (Invited speaker)
1 Feb 20206 Feb 2020

Activity: Talk or presentation typesInvited talk

13th International Conference on Nitride Semiconductors ICNS13

Robert Martin (Invited speaker)
7 Jul 201912 Jul 2019

Activity: Talk or presentation typesInvited talk