Projects per year
My research is focussed on the use of spectroscopic and microscopic methods in the analysis of semiconductors. The main materials of current interest to me are those based on the group III nitride quaternary system, AlxGayIn(1-x-y)N, and in particular nano-scale structures based on them. These have applications in many different areas, including solid-state lighting, data storage, communications and water purification. The techniques I use to study these materials include photoluminescence and electroluminescence spectroscopy, as well multiple modes of scanning electron microscopy (such as cathodoluminescence, electron beam-induced current and X-ray microanalysis). I am also interested in the application of multivariate statistical analysis techniques in the processing of the multidimensional data that these experimental methods yield.
I am a Senior Research Fellow in the Department of Physics, where I have worked in the Semiconductor Spectroscopy and Devices research group since 2000. Prior to this, I studied at Imperial College London, Albert Ludwigs Universität Freiburg and Durham University. My PhD and post-doctoral work at Durham involved the use of scanning electron and optical beam techniques to study thin-film CdTe solar cells. I now apply similar techniques to characterise materials, nanostructures and devices made from group III nitride compounds.
Researcher ID: C-1594-2009
ORCID ID: 0000-0001-7671-7698
Doctor of Philosophy, University of Durham
Award Date: 1 Jan 1999
Bachelor of Science, Imperial College of Science, Technology and Medicine
Award Date: 1 Jan 1995
1/01/20 → 1/07/23
Project: Research Studentship - Internally Allocated
Cameron, D., O'Donnell, K. P., Edwards, P. R., Peres, M., Lorenz, K., Kappers, M. J. & Boćkowski, M., 9 Mar 2020, In: Applied Physics Letters. 116, 10, 4 p., 102105.
Research output: Contribution to journal › Article › peer-reviewOpen AccessFile13 Downloads (Pure)
Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscopeTrager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kraeusel, S., Kusch, G., Jablon, B. M., Johnston, R., Martin, R. W., McDermott, R., Naresh-Kumar, G., Nouf-Allehiani, M., Pascal, E., Thomson, D., Vespucci, S., Mingard, K., Parbrook, P. J., Smith, M. D. & 17 others, , 5 Aug 2020, In: IOP Conference Series: Materials Science and Engineering. 891, 1, 11 p., 012023.
Research output: Contribution to journal › Conference article › peer-reviewOpen AccessFile4 Downloads (Pure)
Data for: "A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content"