• United Kingdom

Accepting PhD Students

1992 …2020
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Research Output 1992 2019

1998

a-Si:H TFTs made on polyimide foil by PECVD at 150ºC

Gleskova, H., Wagner, S. & Suo, Z., 27 Oct 1998, Flat panel display materials - 1998 : volume 508 - MRS proceedings. Fahlen, T. S., Morozumi, S., Parsons, G. N., Seager, C. P. & Tsai, C. C. (eds.). Warrendale, PA, Vol. 508. p. 73-78 6 p. (MRS Symposium Proceedings; vol. 508).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

polyimides
foils
4 Citations (Scopus)

Modeling of gate line delay in very large active matrix liquid crystal displays

Zhang, Q., Shen, D., Gleskova, H. & Wagner, S., 1998, In : IEEE Transactions on Electron Devices. 45, 1, p. 343-345 3 p.

Research output: Contribution to journalArticle

Electric delay lines
SPICE
Amorphous silicon
Liquid crystal displays
Networks (circuits)
17 Citations (Scopus)

Photoresist-free fabrication process for a-Si:H thin film transistors

Gleskova, H., Wagner, S. & Shen, D. S., 1 May 1998, In : Journal of Non-Crystalline Solids. 227-230, PART 2, p. 1217-1220 4 p.

Research output: Contribution to journalArticle

Photoresists
Thin film transistors
photoresists
transistors
Fabrication

Thin foil substrates for rugged and lightweight TFT backplanes

Wagner, S., Ma, E. Y., Gleskova, H. & Suo, Z., 1998, Abstract book: 194th meeting of the electrochemical society. Vol. 98-2.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Metal foil
Substrates
1997

a-Si:H TFTs patterned using laser-printed toner

Gleskova, H., Wagner, S. & Shen, D., 12 Feb 1997, Flat panel display materials II : volume 424 - MRS proceedings. Funada, F., Hatalis, M. K., Kanicki, J. & Summers, C. J. (eds.). Warrendale, PA, Vol. 424. p. 71-76 6 p. (MRS Symposium Proceedings; vol. 424).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

lasers

Direct writing and lift-off patterning of copper lines at 200ºC maximum process temperature

Hong, C. M., Gleskova, H. & Wagner, S., 10 Sep 1997, Flat panel display materials III : volume 471 - MRS proceedings. Parsons, G. N., Fulks, R. T., Slobodin, D. E. & Yuzuriha, T. H. (eds.). Warrendale, PA, Vol. 471. p. 35-40 6 p. (MRS Symposium Proceedings; vol. 471).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Copper
Temperature

PARAMOD metallization of circuit traces and microvias in photodefined dielectrics: Organic High Density Interconnect Structures (HDIS)

Kydd, P. H., Jablonski, G. A., Richard, D. L. & Gleskova, H., 21 Nov 1997, Organic High Density Interconnect Structures (HDIS). p. 174-180 7 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Metallizing
Networks (circuits)

Via hole addressed TFT and process for large-area a-Si:H electronics

Gleskova, H., Wagner, S. & Shen, D., 1997, Amorphous and Microcrystalline Silicon Technology - 1997. Wagner, S., Hack, M., Schiff, E. A., Schropp, R. & Shimizu, I. (eds.). Vol. 467. p. 869-874 6 p. (MRS Symposium Proceedings; vol. 467).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

electronics
glass
amorphous silicon
foils
transistors
12 Citations (Scopus)

Via hole technology for thin-film transistor circuits

Gleskova, H., Wagner, S., Zhang, Q. & Shen, D. S., 1997, In : IEEE Electron Device Letters . 18, 11, p. 523-525 3 p.

Research output: Contribution to journalArticle

Thin film transistors
Networks (circuits)
Amorphous silicon
Liquid crystal displays
Display devices
1996

A-Si:H TFT fabricated by electrophotographic printing

Gleskova, H., Ma, E. Y., Wagner, S. & Shen, D., 1996, Digest of technical papers: display manufacturing technology conference '96. p. 97-98 2 p. (Santa Ana, CA, 1996).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

printing
24 Citations (Scopus)

Electrophotographically patterned thin-film silicon transistors

Gleskova, H., Könenkamp, R., Wagner, S. & Shen, D. S., 1996, In : IEEE Electron Device Letters. 17, 6, p. 264-266 3 p.

Research output: Contribution to journalArticle

Silicon
Transistors
Glass
Thin films
Thin film transistors
1 Citation (Scopus)

Equilibration and stability in undoped amorphous silicon

Wagner, S., Gleskova, H. & Nakata, J., 1996, In : Journal of Non-Crystalline Solids. 198-200, p. 407-414 8 p.

Research output: Contribution to journalArticle

Amorphous silicon
amorphous silicon
Defect density
Annealing
defects

Flexible glass substrates with via holes for TFT backplanes

Gleskova, H., Ma, E. Y., Wagner, S. & Shen, D., Nov 1996, Digest of technical papers: international workshop on active matrix liquid crystal displays '96. Kobe, Japan, p. 105-108 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Open Access
File
Glass
Substrates
1 Citation (Scopus)

In-plane photoconductivity in amorphous silicon doping multilayers

Conde, J. P., Silva, M., Chu, V., Gleskova, H., Vasanth, K., Wagner, S., Shen, D., Popovic, P., Grebner, S. & Schwarz, R., 1996, In : Philosophical Magazine B. 74, 4, p. 331-347 17 p.

Research output: Contribution to journalArticle

Photoconductivity
Amorphous silicon
photoconductivity
amorphous silicon
Multilayers
2 Citations (Scopus)

On the lack of observable light-induced hydrogen diffusion near room temperature

Branz, H. M., Bullock, J. N., Asher, S., Gleskova, H. & Wagner, S., 1996, In : Journal of Non-Crystalline Solids. 198-200, p. 441-444 4 p.

Research output: Contribution to journalArticle

Hydrogen
Defects
defects
room temperature
hydrogen

Recovery kinetics of phosphorus ion-implanted a-Si:H

Nakata, J., Wagner, S., Gleskova, H., Stolk, P. A. & Poate, J. M., 31 Dec 1996, Amorphous silicon technology - 1996: volume 420 - MRS proceedings. Hack, M., Matsuda, A., Schiff, E. A., Schropp, R. & Wagner, S. (eds.). Warrendale, PA, Vol. 420. p. 653-658 6 p. (MRS Symposium Proceedings; vol. 420).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Phosphorus
Kinetics
Recovery
1995
6 Citations (Scopus)

Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Gleskova, H. & Wagner, S., 1995, In : Journal of Non-Crystalline Solids. 190, 1-2, p. 157-162 6 p.

Research output: Contribution to journalArticle

Annealing
Defects
free electrons
annealing
Electrons

Electrophotographic patterning of a-Si:H

Gleskova, H., Wagner, S. & Shen, D., 20 Nov 1995, Amorphous silicon technology - 1995: volume 377 - MRS proceedings. Hack, M., Madan, A., Matsuda, A., Powell, M. & Schiff, E. A. (eds.). Warrendale, PA, Vol. 377. p. 719-724 6 p. (MRS Symposium Proceedings; vol. 377).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Electrophotographic patterning of a-Si:H

Gleskova, H., Wagner, S. & Shen, D., 1995, Proceeding of the second international workshop on active-matrix LCDs. IEEE, p. 16-19 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

masks
glass
thin films
amorphous silicon
chromium
12 Citations (Scopus)

Electrophotographic patterning of thin-film silicon on glass foil

Gleskova, H., Wagner, S. & Shen, D. S., 1 Oct 1995, In : IEEE Electron Device Letters. 16, 10, p. 418-420 3 p.

Research output: Contribution to journalArticle

Silicon
Metal foil
Masks
Thin film circuits
Glass
1 Citation (Scopus)

Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Gleskova, H. & Wagner, S., 20 Nov 1995, Amorphous silicon technology - 1995: volume 377 - MRS proceedings. Hack, M., Madan, A., Matsuda, A., Powell, M. & Schiff, E. A. (eds.). Warrendale, PA, Vol. 377. p. 343-348 6 p. (MRS Symposium Proceedings; vol. 377).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

annealing
defects
electrons

Patterning of a-Si:H by laser printing

Shen, D., Gleskova, H. & Wagner, S., 1995, Digest of technical papers: 1995 SID international symposium. Morreale, J. (ed.). Santa Ana, California, p. 587-590 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

printing
lasers

Unified rate law for the thermal and light-induced annealing of defects in a-Si:H

Gleskova, H. & Wagner, S., 1995, 22nd International conference on physics of semiconductors. Lockwood, D. J. (ed.). Singapore, Vol. 3. p. 2701-2704 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

annealing
defects
1994

Comparison of dark and light-induced annealing of metastable defects in a-Si:H

Gleskova, H., Nakata, M. & Wagner, S., 4 Nov 1994, Amorphous silicon technology - 1994: volume 336 - MRS proceedings. Hack, M., Madan, A., Matsuda, A., Powell, M. & Schiff, E. A. (eds.). Warrendale, PA, Vol. 336. p. 245-250 6 p. (MRS Symposium Proceedings; vol. 336).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

annealing
defects
9 Citations (Scopus)

Toward a practical model of a-Si:H defects in intensity-time-temperature space

Caputo, D., Bullock, J. N., Gleskova, H. & Wagner, S., 4 Nov 1994, Amorphous silicon technology - 1994: volume 336 - MRS proceedings. Hack, M., Madan, A., Matsuda, A., Powell, M. & Schiff, E. A. (eds.). Warrendale, PA, Vol. 336. p. 165-170 6 p. (MRS Symposium Proceedings; vol. 336).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Temperature
Defects
1993
5 Citations (Scopus)

Annealing the defects in a-Si:H under illumination

Gleskova, H., Morin, P. A. & Wagner, S., 25 Oct 1993, Amorphous silicon technology - 1993: volume 297 - MRS proceedings. LeComber, P. G., Madan, A., Schiff, E. A., Tanaka, K. & Thompson, M. J. (eds.). Warrendale, PA, Vol. 297. p. 589-594 6 p. (MRS Symposium Proceedings; vol. 297).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

illumination
annealing
defects
2 Citations (Scopus)

CO2 laser annealing of Al/a-Si:H contact

Gleskova, H., Ilchenko, V. V., Skryshevsky, V. A. & Strikha, V. I., 1993, In : Czechoslovak Journal of Physics. 43, 2, p. 169-178 10 p.

Research output: Contribution to journalArticle

steel structures
laser annealing
continuous wave lasers
infrared absorption
temperature effects
13 Citations (Scopus)

Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

Gleskova, H., Bullock, J. N. & Wagner, S., 2 Dec 1993, In : Journal of Non-Crystalline Solids. 164-166, PART 1, p. 183-186 4 p.

Research output: Contribution to journalArticle

Dangling bonds
Annealing
Defects
luminous intensity
annealing
30 Citations (Scopus)

Kinetics of recovery of the light-induced defects in hydrogenated amorphous silicon under illumination

Gleskova, H., Morin, P. A. & Wagner, S., 1993, In : Applied Physics Letters. 62, 17, p. 2063-2065 3 p.

Research output: Contribution to journalArticle

amorphous silicon
recovery
illumination
annealing
defects
1 Citation (Scopus)

Properties of Au/SiO2/a-Si:H solar cells with wet oxide

Gleskova, H., Skryshevsky, V. A., Bullock, J. N., Wagner, S. & Stuchlik, J., 1993, In : Materials Letters. 16, 6, p. 305-308 4 p.

Research output: Contribution to journalArticle

Oxides
Solar cells
solar cells
Oxidation
oxidation
1992
1 Citation (Scopus)

Reversibility of the light-induced saturation and annealing of defects in a-Si:H

Gleskova, H., Morin, P. A., Bullock, J. N. & Wagner, S., 1992, In : Materials Letters. 13, 4-5, p. 279-283 5 p.

Research output: Contribution to journalArticle

Annealing
saturation
Defects
annealing
defects
1 Citation (Scopus)

The Au/SiOx/a-Si:H structures with very thin anodic oxide layers

Skryshevsky, V. A., Strikha, V. I. & Gleskova, H., 1992, In : Czechoslovak Journal of Physics. 42, 3, p. 331-338 8 p.

Research output: Contribution to journalArticle

MIS (semiconductors)
oxides
oxidation
passivity
field effect transistors