Photo of Fabien Massabuau
  • United Kingdom

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Personal profile

Personal Statement

Fabien Massabuau joined the Department Physics as a Chancellor’s Fellow in September 2019. His research focussed on wide bandgap semiconductors for ultraviolet optoelectronic devices, with a main emphasis on α-Ga2O3 and h-BN.

Prior to that, Fabien was at the Department of Materials Science and Metallurgy at the University of Cambridge for his PhD (2011-2015) and post-doc (2015-2019). In Cambridge, Fabien focussed on understanding the correlation between the nanostructure of III-Nitride materials and their optical properties. He actively participated in the development of a “multi-microscopy” methodology to observe the exact same nanoscale feature under several different microscopes (AFM, SEM-CL, TEM). This work led to new understandings on the properties of defects (dislocations, trench defects) in these materials.

Fabien has authored 40 peer-reviewed articles cumulating >500 citations, 2 book chapters, 1 mobile application and is involved with ABTA Doctoral Researcher Awards (executive committee member), SN Applied Sciences (editorial board member).


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Fingerprint Dive into the research topics where Fabien Massabuau is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

Atomic layer deposition Chemical Compounds
atomic layer epitaxy Physics & Astronomy
Aluminum Oxide Chemical Compounds
optical properties Physics & Astronomy
Sapphire Engineering & Materials Science
sapphire Physics & Astronomy
Optical properties Chemical Compounds
Diamond Chemical Compounds

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Research Output 2017 2019

  • 8 Article
  • 1 Chapter (peer-reviewed)
7 Citations (Scopus)

A peeling approach for integrated manufacturing of large monolayer h‑BN crystals

Wang, R., Purdie, D. G., Fan, Y., Massabuau, F. C-P., Braeuninger-Weimer, P., Burton, O. J., Blume, R., Schloegl, R., Lombardo, A., Weatherup, R. S. & Hofmann, S., 26 Feb 2019, In : ACS Nano. 13, 2, p. 2114-2126 13 p.

Research output: Contribution to journalArticle

Boron nitride
boron nitrides

Atomic layer deposited α-Ga2O3 solar-blind photodetectors

Moloney, J., Tesh, O., Singh, M., Roberts, J. W., Jarman, J. C., Lee, L. C., Huq, T. N., Brister, J., Karboyan, S., Kuball, M., Chalker, P. R., Oliver, R. A. & Massabuau, F. C-P., 6 Sep 2019, In : Journal of Physics D: Applied Physics. 52, 47, 7 p., 475101.

Research output: Contribution to journalArticle

Atomic layer deposition

Activities 2018 2019

  • 2 Journal or guest editorship
  • 1 Editorial board member

Semiconductor Science and Technology (Journal)

Fabien Massabuau (Guest editor)

Activity: Publication peer-review and editorial work typesJournal or guest editorship

SN Applied Sciences (Journal)

Fabien Massabuau (Guest editor)

Activity: Publication peer-review and editorial work typesJournal or guest editorship