SEM SIRION 200

Equipments Details

Description

High vacuum field-emission gun scanning electron microscope (FEGSEM)

forescatter detector for electron channelling contrast imaging (ECCI) Medipix direct electron detector array for EBSD electrostatic beam blanker

Details

Name	SEM SIRION 200
Acquisition date	1/01/09
Manufacturers	FEI

Contact information

Name	Robert Martin, Paul Edwards
Emails	r.w.martin@strath.ac.uk
Links	Website

Terms of loan/booking

Available for loan - internal and external

Fingerprint

Explore the research areas in which this equipment has been used. These labels are generated based on the related outputs. Together they form a unique fingerprint.

10 Article

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
Trager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Ferenczi, G., Hourahine, B., Kotzai, A., Kraeusel, S., Kusch, G., Martin, R. W., McDermott, R., Gunasekar, N., Nouf-Allehiani, M., Pascal, E., Thomson, D., Vespucci, S., Smith, M. D., Parbrook, P. J., Enslin, J. & 17 others, Mehnke, F., Kuhn, C., Wernicke, T., Kneissl, M., Hagedorn, S., Knauer, A., Walde, S., Weyers, M., Coulon, P-M., Shields, P., Bai, J., Gong, Y., Jiu, L., Zhang, Y., Smith, R., Wang, T. & Winkelmann, A., 25 Mar 2020, In: Semiconductor Science and Technology. 35, 5, 15 p., 054001.
Research output: Contribution to journal › Article › peer-review

Open Access
File
1 Citation (Scopus)

5 Downloads (Pure)
The 2020 UV emitter roadmap
Amano, H., Collazo, R., De Santi, C., Einfeldt, S., Funato, M., Glaab, J., Hagedorn, S., Hirano, A., Hirayama, H., Ishii, R., Kashima, Y., Kawakami, Y., Kirste, R., Kneissl, M., Martin, R., Mehnke, F., Meneghini, M., Ougazzaden, A., Parbrook, P. J., Rajan, S. & 16 others, Reddy, P., Römer, F., Ruschel, J., Sarkar, B., Scholz, F., Schowalter, L. J., Shields, P., Sitar, Z., Sulmoni, L., Wang, T., Wernicke, T., Weyers, M., Witzigmann, B., Wu, Y-R., Wunderer, T. & Zhang, Y., 15 Sep 2020, In: Journal of Physics D: Applied Physics. 53, 50, 57 p., 503001.
Research output: Contribution to journal › Article › peer-review

Open Access
File
13 Citations (Scopus)

2 Downloads (Pure)

Data for: Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging
Gunasekar, N. (Creator), Thomson, D. (Contributor), zhang (Contributor), Bai, J. (Contributor), Jiu, L. (Contributor), Yu, X. (Contributor), Gong, Y. P. (Contributor), Smith, R. M. (Contributor), Wang, T. (Contributor) & Trager-Cowan, C. (Contributor), University of Strathclyde, 25 Jul 2018
DOI: 10.15129/08835339-a263-4dab-a4dd-d0119dfe5ac8
Dataset
Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD
Edwards, P. (Creator), Martin, R. (Creator), McKendry, J. (Creator), Gu, E. (Creator) & Dawson, M. (Creator), University of Strathclyde, 14 Nov 2016
DOI: 10.15129/68e2f7a9-36ea-4598-a163-b8b440b593db
Dataset

7 Invited talk
2 Key-note speaker and plenary lectures at conferences

International Workshop on Nitride Semiconductors
Robert Martin (Invited speaker)
23 Aug 2020 → 28 Aug 2020
Activity: Talk or presentation types › Invited talk
12th International Symposium on Semiconductor Light Emitting Devices
Robert Martin (Invited speaker)
10 May 2020 → 15 May 2020
Activity: Talk or presentation types › Invited talk

SEM SIRION 200

Description

Details

Contact information

Terms of loan/booking

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

The 2020 UV emitter roadmap

Data for: Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

International Workshop on Nitride Semiconductors

12th International Symposium on Semiconductor Light Emitting Devices