Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. This dataset provides examples of applying the ECCI technique to GaN-based structures, including:
- Comparing ECCI using forescatter and backscatter geometries;
- Applying ECCI to GaN thin films, GaN-based high electron mobility transistor (HEMT) structures and GaN-based distributed Bragg reflectors (DBRs);
- Comparing ECCI from GaN grown on different substrates and different crystal planes;
- Correlating ECCI with cathodoluminescence (CL) imaging.
The text file Data_description.txt provides further experimental details, and more in-depth analysis is presented in G. Naresh-Kumar et al. (2016) Materials Science in Semiconductor Processing and G. Naresh-Kumar et al. (2014) Microscopy and Microanalysis 20 55-60.