Electron channelling contrast and cathodoluminescence images obtained from III-nitride layer structures

Dataset

Description

Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. This dataset provides examples of applying the ECCI technique to GaN-based structures, including:
- Comparing ECCI using forescatter and backscatter geometries;
- Applying ECCI to GaN thin films, GaN-based high electron mobility transistor (HEMT) structures and GaN-based distributed Bragg reflectors (DBRs);
- Comparing ECCI from GaN grown on different substrates and different crystal planes;
- Correlating ECCI with cathodoluminescence (CL) imaging.

The text file Data_description.txt provides further experimental details, and more in-depth analysis is presented in G. Naresh-Kumar et al. (2016) Materials Science in Semiconductor Processing and G. Naresh-Kumar et al. (2014) Microscopy and Microanalysis 20 55-60.
Date made available2016
PublisherUniversity of Strathclyde

Cite this

Gunasekar, N. (Creator), Thomson, D. (Contributor), Allehiani Nouf Mohammad S, A. (Contributor), Bruckbauer, J. (Contributor), Edwards, P. (Contributor), Hourahine, B. (Contributor), Martin, R. (Supervisor), Trager-Cowan, C. (Supervisor). (2016). Electron channelling contrast and cathodoluminescence images obtained from III-nitride layer structures. University of Strathclyde. Data_description(.txt), Fig_1c_2b(.tif), Fig_1d(.tif), Fig_2a(.tif), Fig_2c(.tif), Fig_2d(.tif), Fig_3a(.tif), Fig_3b(.tif), Fig_3c(.tif), Fig_4a(.tif), Fig_4b(.tif), Fig_4b_GaN_CLintensity_Voigt_fit(.txt). 10.15129/b9e0ba43-2a2e-4ffa-a842-1d743a1d3175