This dataset is the result of an investigation into the influence of Si doping on the morphology and luminescence properties of wide-bandgap AlGaN layers. The dataset contains data acquired from three different samples with approximately the same AlN% and a different Si concentration. The data was acquired using an FEI Quanta 250 environmental scanning electron microscope. The secondary electron (SE) and backscattered electron (BSE) images were produced using the manufacturer-supplied software while the cathodoluminescence (CL) hyperspectral images were acquired using a proprietary software package, CHIMP. Figure numbers in the data file descriptions refer to the Applied Physics Letters paper by Kusch et al. (2015) referenced in the related publications section.
|Date made available||2015|
|Publisher||University of Strathclyde|
Kusch, G. (Creator), Allehiani Nouf Mohammad S, A. (Contributor), Edwards, P. (Creator), Gunasekar, N. (Contributor), Trager-Cowan, C. (Contributor), Martin, R. (Creator). (2015). Data resulting from an investigation of wide-bandgap silicon-doped AlGaN. University of Strathclyde. TS1850_3_014(.tif), TS1860_map5_005(.tif), TS1861_map2_002(.tif), TS1860_map15_016(.tif), TS1860_map33_BSE_001(.jpg), Data_for_Spectra(.xlsx), Data_for_Intensity_map_in_Figure_4(.xlsx), Data_for_Intensity_map_in_Figure_3(.xlsx), Data_for_Energy_map_in_Figure_3(.xlsx). 10.15129/9465dccd-6d17-4a84-9d61-8d6fed1c7201