Data for: "Ni/Au contacts to corundum α-Ga2O3"

  • Fabien Massabuau (Creator)
  • F Adams (Creator)
  • David Nicol (Creator)
  • J Jarman (Creator)
  • M Frentrup (Creator)
  • J Roberts (Creator)
  • T O'Hanlon (Creator)
  • A Kovacs (Creator)
  • P Chalker (Creator)
  • R Oliver (Creator)

Dataset

Description

The structural, chemical and electrical properties of Ni/Au contacts to atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni-Au bilayer dominate the electrical properties. It is found that 400-450oC is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.
Date made available13 Feb 2023
PublisherUniversity of Strathclyde
  • ESTEEM3

    Massabuau, F. (Recipient), 2020

    Prize: National/international honour

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