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Data for: "Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3"

  • David Nicol (Creator)
  • Fabien Massabuau (Supervisor)
  • J.W. Roberts (Creator)
  • Y. Oshima (Creator)
  • L. Penman (Creator)
  • Douglas Cameron (Creator)
  • P Chalker (Creator)
  • Robert Martin (Creator)

Dataset

Description

Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide phase vapor epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures and strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor-acceptor-pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n =1,2,3
Date made available20 Feb 2023
PublisherUniversity of Strathclyde

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  • Figure_2.xlsx

    File: application/vnd.openxmlformats-officedocument.spreadsheetml.sheet, 1.09 MB

    Type: Dataset

    Licence: CC BY 4.0

  • Figure_1.xlsx

    File: application/vnd.openxmlformats-officedocument.spreadsheetml.sheet, 940 KB

    Type: Dataset

    Licence: CC BY 4.0

  • Figure_4.PNG

    File: image/png, 8.82 KB

    Type: Dataset

    Licence: CC BY 4.0

  • Figure_3.xlsx

    File: application/vnd.openxmlformats-officedocument.spreadsheetml.sheet, 276 KB

    Type: Image

    Licence: CC BY 4.0

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