Data for Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection

Dataset

Description

This dataset contains the measurements presented in Journal of Applied Physics 118, 125709 (2015).
This data is taken from an InGaN/GaN light emitting diode structure with quantum wells that have different Indium content. From the evolution of the spectra under different driving current it can be seen how holes can penetrate surprisingly far into the quantum well structure. Simulation results in figures 7 and 8 indicate that this effect can be explained by the strain-induced piezoelectric field in the devices.
Date made available2 Oct 2015
PublisherUniversity of Strathclyde

Cite this

Zhang, S. (Creator), Xie, E. (Creator), Yan, T. (Creator), Yang, W. (Creator), Herrnsdorf, J. (Creator), Gong, Z. (Creator), Watson, I. (Creator), Gu, E. (Creator), Dawson, M. (Creator), Hu, X. (Creator). (2 Oct 2015). Data for Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection. University of Strathclyde. Figure2(.csv), Figure3(.csv), Figure4(.csv), Figure5(.csv), Figure7a(.csv), Figure7b(.csv), Figure8(.csv). 10.15129/c65de283-9f32-4204-8efb-e11521940ca6