This dataset contains detector diffraction patterns and electron backscatter diffraction patterns acquired using the digital hybrid pixel detector Timepix.
The figure numbers refer to those in the paper by Vespucci et al, “Diffractive triangulation of radiative point sources” associated with this dataset.
Fig. 2. Measured signal on the Timepix detector. Pixel(angle)-dependent electron absorption measured on the TimePix detector. Electron channeling effect of electron waves incident on a single-crystalline detector, i.e., a detector diffraction pattern. The measured pattern was obtained at 12 keV from a film of 20 nm HfO2 on Si(001) using a Timepix detector.
Fig. 4. (a) Backscattered electron diffraction measurement at 25 keV obtained from a film of 10nm HfO2 on Si(001) using a Timepix detector. Measurement containing simultaneously a detector diffraction pattern (DDP, dark bands) together with a backscatter Kikuchi pattern (BKP, light bands) of the silicon sample.
Dataset1 and Dataset2 contain the 10 × 10 grid map (16 bit unsigned stack of binary images, ((100 frame per grid point)) and background files respectively, used to estimate the fixed Si detector crystal orientation, where we varied both the orientation and the projection center position of all measured DDPs in a 10×10 grid map with approx. 10 micron horizontal step size from an HfO2 film which showed no backscattered Kikuchi patterns at 20 keV primary beam energy.
Data embargo pending publication