Research output per year
Research output per year
Description
This dataset contains the results of scanning electron microscopy (SEM) secondary electron (SE) images, panchromatic cathodoluminescence (CL) imaging and Electron Channelling Contrast Imaging (ECCI) and Raman spectroscopy on GaN epitaxial layers. These techniques were used to assess the morphology of the GaN crystal growth, and the dislocation density and strain in planar layers.
Dataset held at University of Bath Research Data Archive
Dataset held at University of Bath Research Data Archive
| Date made available | 11 Oct 2017 |
|---|---|
| Publisher | University of Bath |
Research output
- 1 Article
-
Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes
Le Boulbar, E. D., Priesol, J., Nouf-Allehiani, M., Naresh-Kumar, G., Fox, S., Trager-Cowan, C., Šatka, A., Allsopp, D. W. E. & Shields, P. A., 15 May 2017, In: Journal of Crystal Growth. p. 30-38 9 p.Research output: Contribution to journal › Article › peer-review
Open AccessFile9 Citations (Scopus)138 Downloads (Pure)
Projects
- 2 Finished
-
Manufacturing of nano-engineered III-nitride semiconductors
Martin, R. (Principal Investigator) & Trager-Cowan, C. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/05/15 → 30/09/21
Project: Research
-
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
Trager-Cowan, C. (Principal Investigator), Gray, A. (Co-investigator) & Hourahine, B. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/07/12 → 30/06/16
Project: Research