Compositions and strains for AlInN layers compared to Vegard's rule

Dataset

Description

Measured compositions of layers and comparison with models (Fig. 4 data); measured strains of layers and comparison with models (Fig. 6 data); measured gallium profiles near interfaces with buffer layer (Fig. 5 data)
Date made available4 Jun 2017
PublisherUniversity of Strathclyde

Research Output

Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates

Magalhães, S., Franco, N., Watson, I. M., Martin, R. W., O'Donnell, K. P., Schenk, H. P. D., Tang, F., Sadler, T. C., Kappers, M. J., Oliver, R. A., Monteiro, T., Martin, T. L., Bagot, P. A. J., Moody, M. P., Alves, E. & Lorenz, K., 28 Apr 2017, In : Journal of Physics D: Applied Physics. 50, 20 p., 205107.

Research output: Contribution to journalArticle

Open Access
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    Cite this

    Watson, I. (Creator) (4 Jun 2017). Compositions and strains for AlInN layers compared to Vegard's rule. University of Strathclyde. Fig_4_5_6_data_for_S(7.zip). 10.15129/ee0f3482-8f65-4887-839f-a73f5cf9389b