Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

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2017

Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

Tian, P., Edwards, P. R., Wallace, M. J., Martin, R. W., McKendry, J. J. D., Gu, E., Dawson, M. D., Qiu, Z-J., Jia, C., Chen, Z., Zhang, G., Zheng, L. & Liu, R., 23 Jan 2017, In : Journal of Physics D: Applied Physics. 50, 7, 12 p., 075101.

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