Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

Paul Edwards (Creator)
Robert Martin (Creator)
Jonathan McKendry (Creator)
Erdan Gu (Creator)
Martin Dawson (Creator)

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2017

Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

Tian, P., Edwards, P. R., Wallace, M. J., Martin, R. W., McKendry, J. J. D., Gu, E., Dawson, M. D., Qiu, Z-J., Jia, C., Chen, Z., Zhang, G., Zheng, L. & Liu, R., 23 Jan 2017, In : Journal of Physics D: Applied Physics. 50, 7, 12 p., 075101.

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