Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

Paul Edwards (Creator)
Robert Martin (Creator)
Jonathan McKendry (Creator)
Erdan Gu (Creator)
Martin Dawson (Creator)

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2017
Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD
Tian, P., Edwards, P. R., Wallace, M. J., Martin, R. W., McKendry, J. J. D., Gu, E., Dawson, M. D., Qiu, Z-J., Jia, C., Chen, Z., Zhang, G., Zheng, L. & Liu, R., 23 Jan 2017, In: Journal of Physics D: Applied Physics. 50, 7, 12 p., 075101.
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