Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD



GaN-based light emitting diodes (LEDs) have been fabricated on sapphire substrates with different thicknesses of GaN buffer layer grown by a combination of hydride vapor phase epitaxy and metalorganic chemical vapor deposition. We analysed the LED efficiency and modulation characteristics with buffer thicknesses of 12 μm and 30 μm. Further characterisation of the samples was performed using: cathodoluminescence hyperspectral imaging; Raman spectroscopy; photoluminescence spectroscopy; electroluminescence spectroscopy; and measurement of the modulation bandwidth. Further analysis of this data is presented in the paper by Tian et al, Journal of Physics D: Applied Physics (2016).
Date made available14 Nov 2016
PublisherUniversity of Strathclyde
Date of data production2016

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