Cathodoluminescence and wavelength-dispersive X-ray measurements of InAlGaN



This data is the result of cathodoluminescence hyperspectral imaging and wavelength-dispersive X-ray measurements carried out on a set of InAlGaN epilayers, grown at the Technische Universität Berlin using a range of different precursor fluxes. Details of the samples are given in Sample_details.txt, details of the measurements in Measurement_details.txt, and a description of the proprietary cathodoluminescence file format in File_formats.txt.

Further analysis and interpretation of this data is presented in the associated journal article, and figure numbers referred to in the data correspond to those used in this paper:
G. Kusch et al.,"Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1-x-yN", Jap. J. Appl. Phys. (2019).
Date made available14 Mar 2019
PublisherUniversity of Strathclyde
Date of data production2018

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