Progress towards transfer printing of II-VI and III-V DBR-free VECSELs

Chappell, G. (Speaker), Guilhabert, B. J. E. (Contributor), Watson, I. (Contributor), Dawson, M. (Contributor), Maria Tamargo (Contributor), Hastie, J. (Contributor)

Activity: Talk or presentation typesOral presentation

Description

Producing DBR-free VECSELs requires releasing and transferring a multi-quantum well gain membrane from its growth substrate to a heatspreader. We present a suspension method that requires no specifically engineered release layer to produce high quality membranes of III-V and II-VI semiconductors that can be transfer-printed onto a heatspreader. Initial experiments with the II-VI quaternary ZnCdMgSe allowed us to transfer print 100 μm sided square platelets onto diamond; each platelet face possessed an RMS surface roughness of 1 nm over a representative 5 x 5 µm2 area. We will present our processing steps and progress towards constructing transfer printed DBR-free VECSELs.
Period5 Feb 2020
Event titleVertical External Cavity Surface Emitting Lasers (VECSELs) X
Event typeConference
LocationSan Francisco, United States, California
Degree of RecognitionInternational

Keywords

  • VECSEL, II-VI materials, Epitaxial lift off