Progress towards transfer printing of II-VI and III-V DBR-free VECSELs

Description

Producing DBR-free VECSELs requires releasing and transferring a multi-quantum well gain membrane from its growth substrate to a heatspreader. We present a suspension method that requires no specifically engineered release layer to produce high quality membranes of III-V and II-VI semiconductors that can be transfer-printed onto a heatspreader. Initial experiments with the II-VI quaternary ZnCdMgSe allowed us to transfer print 100 μm sided square platelets onto diamond; each platelet face possessed an RMS surface roughness of 1 nm over a representative 5 x 5 µm2 area. We will present our processing steps and progress towards constructing transfer printed DBR-free VECSELs.

Period	5 Feb 2020
Event title	Vertical External Cavity Surface Emitting Lasers (VECSELs) X
Event type	Conference
Location	San Francisco, United States, CaliforniaShow on map
Degree of Recognition	International