GaN-diode-pumped AlGaInP VECSEL for strontium optical clocks

  • Riccardo Casula (Contributor)
  • Moriya, P. (Contributor)
  • Chappell, G. (Contributor)
  • Daniele Carmine Parrotta (Contributor)
  • Sanna Ranta (Contributor)
  • Hermann Kahle (Contributor)
  • Mircea Guina (Contributor)
  • Hastie, J. (Invited speaker)

Activity: Talk or presentation types › Invited talk

Description

Vertical-external-cavity surface-emitting lasers (VECSELs) are interesting for quantum technologies based on cold atoms/ions, providing high brightness and low noise at specific transition frequencies. Here we report diode-pumped AlGaInP-based VECSELs developed for the second cooling transition of strontium, achieving 300mW at 689nm, and 170mW single-frequency, locked to a reference. The VECSELs were optically-pumped with GaN laser diodes, now widely available. The VECSEL gain structure was designed for short pump absorption at blue wavelengths, and a ten-fold increase in output power was achieved compared to previously reported blue-diode-pumped VECSELs. We compare narrow linewidth performance with similar VECSELs pumped with low-noise green lasers.
Period6 Feb 2019
Event titleSPIE Photonics West 2019 LASE: Vertical External Cavity Surface Emitting Lasers (VECSELs) IX
Event typeConference
Conference numberIX
LocationSan Francisco, United States, CaliforniaShow on map
Degree of RecognitionInternational

Keywords

  • Red Lasers
  • VECSEL
  • Semiconductor lasers
  • SDL
  • Strontium
  • Optical clocks
  • Quantum technologies
  • Laser
  • GaN

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