13th International Conference on Nitride Semiconductors (ICNS-13)

Activity: Participating in or organising an event types › Participation in conference

Description

Talk 1: Luminescence and defect imaging in semi-polar InGaN/GaN ‘bow-tie’ structures on patterned Si substrates
Talk 2: Investigating the Structural Properties of AlN Thin Films Grown on Nano-Patterned Sapphire Substrates in the Scanning Electron Microscope
Poster: Investigation of hexagonal inclusions in zincblende GaN using cathodoluminescence and electron backscatter diffraction in the SEM
Period7 Jul 2019 → 12 Jul 2019
Event typeConference
Conference number13
LocationSeattle, United States, Washington
Degree of RecognitionInternational

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